VSMG2720 Vishay, VSMG2720 Datasheet - Page 3

• Manufacturer Part Number: VSMG2720
• Description: High Speed Infrared Emitting Diode, Rohs Compliant, 830 Nm, Gaalas Double Hetero
• Manufacturer: Vishay

BASIC CHARACTERISTICS
T
Document Number: 81597
Rev. 1.1, 28-Nov-08
amb
= 25 °C, unless otherwise specified
21629
Fig. 3 - Pulse Forward Current vs. Pulse Duration
21009
16031
0.001
1000
1000
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
0.01
100
100
0.1
0.1
10
10
1
1
0.01
1
0
0.5
I
F
- Forward Pulse Current (mA)
V
0.1
1
t
F
P
- Forward Voltage (V)
- Pulse Duration (ms)
10
1.5
t
P
/T = 0.01
2
1
High Speed Infrared Emitting Diode, RoHS
Compliant, 830 nm, GaAlAs Double Hetero
2.5
For technical questions, contact: [e-mail]
0.02
100
0.05
0.2
T
0.5
10
t
t
3
amb
p
p
/T = 0.001
= 1 µs,
< 50 °C
3.5
0.1
1000
100
4
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
16972_1
Fig. 6 - Relative Radiant Power vs. Wavelength
94 8013
1.25
0.75
0.25
1.0
0.5
1.0
0.9
0.8
0.7
0
740
0.6
0.4
Vishay Semiconductors
800
0.2
- Wavelength (nm)
0°
0
10°
VSMG2720
900
20°
www.vishay.com
30°
40°
50°
60°
70°
80°
3