FMC12N50E Fuji Electric holdings CO.,Ltd, FMC12N50E Datasheet
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FMC12N50E
Related parts for FMC12N50E
FMC12N50E Summary of contents
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... FMC12N50E 3 Super FAP-E series Features Maintains both low power loss and low noise Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applications Switching regulators UPS (Uninterruptible Power Supply) ...
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... FMC12N50E Allowable Power Dissipation PD=f(Tc) 200 180 160 140 120 100 ° Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 µ VDS [V] Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 µ 100 10 1 0.1 0.01 0.01 0.1 1 ...
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... FMC12N50E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V 1.6 1.4 1.2 1.0 max. 0.8 0.6 0.4 0.2 0.0 -50 - Tch [ C] ° Typical Gate Charge Characteristics VGS=f(Qg):ID=12A,Tch=25 C ° Vcc= 100V 250V 12 400V [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25 µ ...
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... FMC12N50E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)<=12A 500 I =5A AS 400 300 I =8A AS 200 I =12A AS 100 starting Tch [ ° 100 125 150 FUJI POWER MOSFET Transient Thermal Impedance Zth(ch-c)=f(t):D ...
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... FMC12N50E 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. ...