FMC16N50E Fuji Electric holdings CO.,Ltd, FMC16N50E Datasheet
FMC16N50E
Related parts for FMC16N50E
FMC16N50E Summary of contents
Page 1
... FMC16N50E 3 Super FAP-E series Features Maintains both low power loss and low noise Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applications Switching regulators UPS (Uninterruptible Power Supply) ...
Page 2
... FMC16N50E Allowable Power Dissipation PD=f(Tc) 300 250 200 150 100 ° Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 µ VDS [V] Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 µ 100 10 1 0.1 0 [A] Safe Operating Area ...
Page 3
... FMC16N50E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8A,VGS=10V 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 max. 0.4 0.3 typ. 0.2 0.1 0.0 -50 - Tch [ C] ° Typical Gate Charge Characteristics VGS=f(Qg):ID=16A,Tch= Vcc= 100V 250V 400V [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25 µ 100 10 1 0.1 0.00 0.25 0.50 0.75 1.00 VSD [V] ...
Page 4
... FMC16N50E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)<=16A 700 600 I =7A 500 AS 400 I =10A AS 300 I =16A AS 200 100 starting Tch [ 100 125 150 C] ° Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D ...
Page 5
... FMC16N50E 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. ...