FMC11N60E Fuji Electric holdings CO.,Ltd, FMC11N60E Datasheet
FMC11N60E
Related parts for FMC11N60E
FMC11N60E Summary of contents
Page 1
... FMC11N60E 3 Super FAP-E series Features Maintains both low power loss and low noise Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applications Switching regulators UPS (Uninterruptible Power Supply) ...
Page 2
... FMC11N60E Allowable Power Dissipation PD=f(Tc) 200 180 160 140 120 100 ° Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 µ VDS [V] Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C µ 100 10 1 0.1 0.01 0.01 0 [A] Safe Operating Area ...
Page 3
... FMC11N60E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5.5A,VGS=10V 2.5 2.0 1.5 max. 1.0 0.5 0.0 -50 - Tch [ C] ° Typical Gate Charge Characteristics VGS=f(Qg):ID=11A,Tch=25 C ° Vcc= 120V 12 480V [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25 C µ 100 ...
Page 4
... FMC11N60E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=11A 600 500 I =5A 400 AS 300 I =7A AS 200 I =11A AS 100 starting Tch [ 100 125 150 C] ° FUJI POWER MOSFET - ...
Page 5
... FMC11N60E 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. ...