NP34N055SHE Renesas Electronics Corporation., NP34N055SHE Datasheet - Page 2

• Manufacturer Part Number: NP34N055SHE
• Description: Switching N-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
V
TEST CIRCUIT 3 GATE CHARGE
2
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
= 20
PG.
→
0 V
CHARACTERISTICS
PG.
I
G
V
= 2 mA
50
DD
R
D.U.T.
Ω
G
I
D
= 25
50
I
AS
D.U.T.
Ω
Ω
Note
Note
BV
DSS
Starting T
R
V
Note
L
DD
V
DS
L
V
DD
ch
SYMBOL
R
V
V
| y
t
t
I
C
Q
Q
I
C
C
DS(on)
GS(th)
d(on)
d(off)
Q
F(S-D)
Q
DSS
GSS
t
t
t
oss
GD
A
fs
iss
rss
GS
rr
r
f
G
rr
|
= 25°C)
Data Sheet D17522EJ1V0DS
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A/
V
0
D
F
F
GS
DS
GS
DS
DS
GS
DS
GS
DD
GS
G
DD
GS
= 34 A, V
= 34 A, V
τ = 1 s
Duty Cycle
= 34 A
= 1 Ω
= 55 V, V
= V
= 10 V, I
= 25 V
= ±20 V, V
= 10 V, I
= 0 V
= 28 V, I
= 10 V
= 10 V
TEST CIRCUIT 2 SWITCHING TIME
= 44 V
PG.
µ
GS
TEST CONDITIONS
τ
, I
D
GS
GS
D
D
D
≤
= 250
µ
GS
= 17 A
= 17 A
= 17 A
= 0 V
= 0 V
1%
DS
s
= 0 V
R
= 0 V
G
D.U.T.
µ
A
R
V
DD
L
MIN.
V
Wave Form
V
Wave Form
2.0
GS
DS
6
V
V
V
GS
DS
0
0
TYP.
1600
DS
250
120
3.0
1.0
12
15
21
15
35
12
30
12
40
58
10%
9
t
d(on)
90%
NP34N055SHE
t
on
10% 10%
t
MAX.
2400
r
±10
380
220
4.0
10
19
47
38
70
29
45
V
GS
t
d(off)
t
off
90%
UNIT
mΩ
µ
µ
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
90%
t
V
S
V
f
A
A