NP36P04SDG Renesas Electronics Corporation., NP36P04SDG Datasheet
NP36P04SDG
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NP36P04SDG Summary of contents
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... DESCRIPTION The NP36P04SDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER Note NP36P04SDG-E1-AY Note NP36P04SDG-E2-AY Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • Super low on-state resistance R = 17.0 mΩ MAX − ...
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... μ Q di/dt = −100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG (− τ τ μ Duty Cycle ≤ 1% Data Sheet D19074EJ2V0DS NP36P04SDG MIN. TYP. MAX. UNIT μ − m100 −1.0 −1.6 −2 12.5 17.0 mΩ 15.4 23.5 mΩ 2800 pF ...
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... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE -100 R th(ch-A) R th(ch- 100 Pulse Width - s Data Sheet D19074EJ2V0DS NP36P04SDG 50 75 100 125 150 175 200 - Case Temperature - ° 125°C/Wi = 2.68°C/Wi Single Pulse 100 1000 3 ...
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... V DS Pulsed 0.1 175 225 -0.1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 0 -1000 0 V Data Sheet D19074EJ2V0DS NP36P04SDG = −55° −25°C 25°C 75°C 125°C 150°C 175° Gate to Source Voltage - −55°C ch − ...
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... Q G REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 10 di/dt = −100 A/μ 1.5 -0 Diode Forward Current - A F Data Sheet D19074EJ2V0DS NP36P04SDG C iss C oss C rss -1 -10 -100 -12 = − −20 V − − ...
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... Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 0.5±0.1 No Plating 0 to 0.25 0.5±0.1 Data Sheet D19074EJ2V0DS NP36P04SDG ...
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... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). NP36P04SDG Not all M8E 02. 11-1 ...