TUA6039 Infineon Technologies Corporation, TUA6039 Datasheet - Page 5

• Manufacturer Part Number: TUA6039
• Description: Stationary - Mopll & Silicon Tuner
• Manufacturer: Infineon Technologies Corporation

Application Notes Revision 3.0
May 2007
1. Half NIM Design
1.1.
Circuit Concept
The RF input signal is split by a simple high pass filter combined with IF & CB (Citizen Band) traps.
Instead of band switching with PIN diodes a very simple tri-plexer circuit is used. With a high inductive
coupling the antenna impedance is transformed to the tuned input circuits. The pre-selected signal is then
amplified by the high gain Semi-biased MOSFET BF5030W. One BG5120K, Dual-MOSFET can be used
for both VHF bands. In the following tuned band-pass filter stage, the channel is selected and unwanted
signals like adjacent channels and image frequency are rejected. Tracking traps of pre-stages and
capacitive image frequency compensation of band filters reject especially image frequencies.
The conversion to IF is done in the one-chip tuner-PLL IC, TUA6039-2. TUA6039-2 is a real 3 band tuner
IC which has all the active parts for the 3 mixers, 3 oscillators, an SAW driver and IF amplifier, the
complete PLL functions including 4 PNP ports & 1 NPN port for the band switching, and a wideband AGC
detector for internal tuner AGC. Combined with the optimized loop filter, 4 programmable charge pump
currents, the balanced crystal oscillator, and the voltage controlled oscillators which have superb
characteristics attributes to Infineon's Bipolar technologies, the Half NIM can achieve distinguished phase
noise performance suitable for all digital applications. The balanced IF output signal of the TUA6039-2 is
designed to directly drive a SAW filter in the following IF stage. The signal from the SAW is further
amplified by the Gain-Controlled on-chip amplifier and its output signal can be used directly by the
demodulator IC in the following stage.
The Half NIM consumes less than 130mA current or 0.65 Watt power with +5V supply voltage (or 130mA
current or 430mW with +3.3V). This can be a big advantage for portable or handheld appliances.
Fig. 1 Circuit Block Diagram of DVB-T Half NIM
For the detailed circuit description please refer to Section 8.
4
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Application Engineering
IFAP COM Tuner Systems