VBUS053AZ-HAF Vishay, VBUS053AZ-HAF Datasheet - Page 2

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VBUS053AZ-HAF

Manufacturer Part Number
VBUS053AZ-HAF
Description
Usb-otg Bus-port Esd-protection For V = 12 V
Manufacturer
Vishay
Datasheet

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VBUS053AZ-HAF
Vishay Semiconductors
Electrical Characteristics
Ratings at - 40 °C to 85 °C, ambient temperature unless otherwise specified
VBUS053AZ-HAF
All inputs (pin 1, 2, and 3) to ground (pin 7)
V
www.vishay.com
2
BUS
Protection paths
Reverse working voltage
Reverse current
Forward voltage
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Line capacitance
Line Symmetry
Line to line capacitance
Protection paths
Reverse working voltage
Reverse current
Forward voltage
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Line capacitance
(pin 6) to ground (pin 7)
Parameter
Parameter
at I
at I
at I
at I
any other I/O pin at V
For technical support, please contact: ESD-Protection@vishay.com
number of line which can be protected
number of line which can be protected
PP
PP
PP
PP
difference of the line capacitance
at V
at I
at I
= 1 A; acc. IEC 61000-4-5; T = 25 °C
= 3 A; acc. IEC 61000-4-5; T = 25 °C
= 1 A; acc. IEC 61000-4-5; T = 25 °C
= 8 A; acc. IEC 61000-4-5; T = 25 °C
F
F
R
Test conditions/remarks
Test conditions/remarks
among pins 1, 2 and 3
at V
at V
at V
= 3 A; acc. IEC 61000-4-5
= 8 A; acc. IEC 61000-4-5
at V
= V
Test pin at V
R
at I
R
RWM
R
at I
at I
at I
R
at I
at I
= 0 V; f = 1 MHz
= 0 V; f = 1 MHz
= V
= V
R
R
F
F
R
R
= 100 nA
= 0.1 µA
= 3.3 V; T = 65 °C
= 15 mA
= 10 mA
RWM
= 1 mA
RWM
= 1 mA
R
R
= 3.3 V, f = 1 MHz
= 5.5 V
= 12 V
= 0 V;
Symbol
Symbol
N lines
N lines
V
V
V
dC
C
V
RWM
V
V
C
RWM
V
V
C
V
V
V
V
I
I
I
BR
DD
BR
R
R
R
F
C
C
F
D
F
C
C
F
D
D
Min.
Min.
5.5
0.7
6.5
0.6
12
15
0.35
0.75
17.5
Typ.
Typ.
3.4
0.7
10
15
25
70
Document Number 81845
0.085
Max.
Max.
Rev. 1.0, 07-Oct-08
100
1.2
4.1
0.1
0.5
0.9
2.2
10
12
18
18
20
30
80
3
1
1
1
lines
Unit
Unit
line
µA
µA
pF
pF
pF
nA
pF
V
V
V
V
V
V
V
V
V
V
V
V

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