VBUS05L1-DD1 Vishay, VBUS05L1-DD1 Datasheet - Page 2

• Manufacturer Part Number: VBUS05L1-DD1
• Description: Bidirectional Symmetrical Bisy Low Cap. Single Line Esd-protection Diode In Llp1006-2m
• Manufacturer: Vishay

VBUS05L1-DD1
Vishay Semiconductors
VBUS05L1-DD1: ESD protection with lowest load capacitance
The VBUS05L1-DD1 is a Bidirectional and Symmetrical (BiSy) ESD-protection device which clamps positive
and negative overvoltage transients to ground. Connected between the signal or data line and the ground the
VBUS05L1-DD1 offers a high isolation (low leakage current, lowest capacitance) within the specified working
range. Due to the short leads and small package size of the tiny LLP1006-2M package the line inductance is
very low, so that fast transients like an ESD-strike can be clamped with minimal over- or undershoots.
Electrical Characteristics
T
VBUS05L1-DD1
Typical Characteristics
T
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2
Protection paths
Reverse stand-off voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
20557
120 %
100 %
Parameter
Figure 1. ESD Discharge Current Wave Form
80 %
60 %
40 %
20 %
53 %
27 %
0 %
- 10 0 10 20 30 40 50 60 70 80 90 100
acc. IEC 61000-4-2 (330 Ω/150 pF)
Rise time = 0.7 ns to 1 ns
Time (ns)
Number of lines which can be protected
For technical support, please contact:
Test conditions/remarks
at V = 2.5 V; f = 1 MHz
at V = 0 V; f = 1 MHz
at I
at I = 0.05 µA
PP
at V = 5.5 V
at I
at I = 1 mA
= I
PP
PPM
= 1 A
= 2 A
[e-mail]
Symbol
V
N
20548
V
Figure 2. 8/20 µs Peak Pulse Current Wave Form
RWM
C
C
V
V
lines
I
BR
R
100 %
C
C
D
D
80 %
60 %
40 %
20 %
0 %
0
Min.
5.5
7
acc. IEC 61000-4-5
10
Time (µs)
8 µs to 100 %
11.5
0.33
0.34
Typ.
8.4
20
14
20 µs to 50 %
Document Number 81188
30
Max.
0.05
9.5
0.4
14
17
Rev. 1.0, 15-Oct-09
1
40
lines
Unit
µA
pF
pF
V
V
V
V