TB0640M Diodes, Inc., TB0640M Datasheet - Page 2

• Manufacturer Part Number: TB0640M
• Description: 50a Bi-directional Surface Mount Thyristor Surge Protective Device
• Manufacturer: Diodes, Inc.

Notes:
DS30361 Rev. 7 - 2
Electrical Characteristics
TB0640M
TB0720M
TB0900M
TB1100M
TB1300M
TB1500M
TB1800M
TB2300M
TB2600M
TB3100M
TB3500M
Part Number
2.
3. Off-state capacitance measured at f = 1.0MHz, 1.0V
1. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
recovery time does not exceed 30ms.
I
H
> (V
L
Repetitive
/R
Off-State
V
Voltage
L
Rated
DRM
) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
120
140
160
190
220
275
320
58
65
75
90
(V)
Symbol
V
I
Current @
V
V
DRM
I
I
I
C
Off-State
I
DRM
V
Leakage
BR
BO
I
PP
DRM
BO
BR
H
T
O
V
DRM
5
5
5
5
5
5
5
5
5
5
5
(uA)
@ T
Breakover
Voltage
V
BO
130
160
180
220
265
300
350
400
A
77
88
98
= 25°C unless otherwise specified
(V)
RMS
I
BR
@ I
On-State
Voltage
www.diodes.com
V
signal, V
I
T
T
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
DRM
I
I
I
BO
PP
(V)
H
= 1A
I
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current
On state voltage
Peak pulse current
Off-state capacitance
2 of 4
V
R
T
= 2V
(mA)
Min
Breakover
50
50
50
50
50
50
50
50
50
50
50
DC
Current
bias.
I
BO
(mA)
V
Max
800
800
800
800
800
800
800
800
800
800
800
DRM
V
Holding Current
BR
(mA)
Min
150
150
150
150
150
150
150
150
150
150
150
V
BO
I
V
NOTE: 2
Max (mA)
NOTE: 3
H
Parameter
800
800
800
800
800
800
800
800
800
800
800
Capacitance
Off-State
C
O
140
140
140
90
90
90
90
60
60
60
60
(pF)
TB0640M - TB3500M
Marking Code
T064M
T072M
T090M
T110M
T130M
T150M
T180M
T230M
T260M
T310M
T350M