OM6001ST International Rectifier Corp., OM6001ST Datasheet - Page 2

• Manufacturer Part Number: OM6001ST
• Description: 100v Thru 500v, Up To 14 Amp, N-channel Mosfet With Or Without Zener Gate Clamp Protection
• Manufacturer: International Rectifier Corp.

ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6101ST / OM6001ST (100V)
Parameter
BV
V
I
I
I
I
V
R
R
DYNAMIC
g
C
C
C
t
t
t
t
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
I
V
V
t
1 Pulse Test: Pulse Width 300msec, Duty Cycle
GSS
GSS
DSS
D(on)
d(on)
r
d(off)
f
S
SM
rr
fs
GS(th)
DS(on)
DS(on)
DS(on)
iss
oss
rss
SD
SD
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage (OM6101)
Gate-Body Leakage (OM6001)
Zero Gate Voltage Drain
Current
On-State Drain Current
Static Drain-Source On-State
Voltage
Static Drain-Source On-State
Resistance
Static Drain-Source On-State
Resistance
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source Current
(Body Diode)
Source Current
(Body Diode)
Diode Forward Voltage
Diode Forward Voltage
Reverse Recovery Time
1
1
1
1
1
1
1
1
Min. Typ. Max. Units Test Conditions
100
2.0
4.0
14
750
250
100
100
0.1
0.2
1.2
15
35
38
23
2%.
± 500 nA
± 100 nA
0.25
1.60
0.20
0.40
- 2.5
- 2.5
- 14
- 56
4.0
1.0
(T
C
= 25°C unless otherwise noted)
S(W )
mA
mA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
A
V
A
A
V
V
)
(W
V
I
V
V
V
V
V
T
V
V
V
V
T
V
V
V
f = 1 MHz
V
R
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
T
T
T
dl
1 Pulse Test: Pulse Width 300msec, Duty Cycle
D
C
C
C
C
J
GS
DS
GS
GS
DS
DS
DS
GS
GS
GS
DS
GS
DS
DD
g
F
= 250 mA
/ds = 100 A/ms
= 25 C, I
= 25 C, I
= 150 C, I
= 125° C
= 125 C
= 7.5 W , V
= V
= Max. Rat., V
= 0.8 Max. Rat., V
= 25 V
= 0,
= ± 12.8 V
= ± 20 V
= 10 V, I
= 10 V, I
= 10 V, I
= 0
= 30 V, I
2 V
2 V
GS
DS(on)
DS(on)
, I
D
S
S
D
D
D
D
= 250 mA
= -14 A, V
= -12 A, V
F
, V
, I
DS
= 8 A
= 8 A
= 8 A,
@ 8 A
= I
D
GS
= 10 V
= 8 A
S
G
,
GS
= 10 V
= 0
GS
GS
GS
D
S
= 0,
= 0
= 0
C
t
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
ELECTRICAL CHARACTERISTICS:
Parameter
BV
V
I
I
I
I
V
R
R
DYNAMIC
g
C
C
t
t
t
I
I
V
V
t
GSS
GSS
DSS
D(on)
d(on)
r
d(off)
f
S
SM
rr
fs
GS(th)
DS(on)
SD
SD
DS(on)
DS(on)
iss
oss
rss
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage (OM6102)
Gate-Body Leakage (OM6002)
Zero Gate Voltage Drain
Current
On-State Drain Current
Static Drain-Source On-State
Voltage
Static Drain-Source On-State
Resistance
Static Drain-Source On-State
Resistance
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source Current
(Body Diode)
Source Current
(Body Diode)
Diode Forward Voltage
Diode Forward Voltage
Reverse Recovery Time
STATIC P/N OM6102ST / OM6002 ST (200V)
1
2%.
1
1
1
1
1
1
1
Min. Typ. Max. Units Test Conditions
200
2.0
9.0
3.0
1.25
780
150
250
0.1
0.2
5.8
55
18
45
27
9
± 500 nA
± 100 nA
0.25
0.44
0.88
(T
- 36
4.0
1.0
2.2
- 9
- 2
- 2
C
= 25°C unless otherwise noted)
S(W )
mA
mA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
A
V
)
A
A
V
V
(W
V
I
V
V
V
V
V
T
V
V
V
V
T
V
V
V
f = 1 MHz
V
R
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
T
T
T
dl
D
GS
DS
GS
GS
DS
DS
C
DS
GS
GS
GS
C
DS
GS
DS
DD
C
C
J
g
F
= 250 mA
= 150 C, I
/ds = 100 A/ms
= 125° C
= 125 C
= 7.5 W , V
= 25 C, I
= 25 C, I
= 0,
= V
= ± 12.8 V
= ± 20 V
= Max. Rat., V
= 0.8 Max. Rat., V
= 10 V, I
= 10 V, I
= 10 V, I
= 0
= 25 V
= 75V, I
2 V
2 V
GS
DS(on)
DS(on)
, I
D
S
S
D
D
D
D
= 250 mA
, V
, I
F
@ 5.0 A
GS
= -9 A, V
= -8 A, V
= 5.0 A
= 5.0 A
= 5.0 A,
= I
D
GS
=10 V
= 5.0 A
S
,
= 10 V
G
GS
= 0
GS
GS
GS
= 0,
D
S
= 0
= 0