OM6227SS International Rectifier Corp., OM6227SS Datasheet - Page 2

• Manufacturer Part Number: OM6227SS
• Description: Dual High Current Power Mosfets In Hermetic Isolated Sip Package
• Manufacturer: International Rectifier Corp.

* Indicates Pulse Test = 300 µsec, Duty Cycle = 2%
** Limited by circuit inductance
ELECTRICAL CHARACTERISTICS:
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
SOURCE DRAIN DIODE CHARACTERISTICS
Drain-Source Breakdown Voltage (V
Zero Gate Voltage Drain
Gate-Body Leakage Current, Forward (V
Gate-Body Leakage Current, Reverse (V
Gate-Threshold Voltage
Static Drain-Source On-Resistance (V
Drain-Source On-Voltage (V
Forward Transconductance (V
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Time
(V
(V
(V
(T
(I
(I
D
D
J
DS
DS
DS
= 24 A)
= 12 A, T
= 125° C)
= 400 V, V
= 320 V, V
= V
GS
Characteristic
, I
J
D
= 125° C)
= 0.25 mAdc
GS
GS
= 0)
= 0, T
J
GS
= 125° C)
*
DS
= 10 Vdc)
(I
= 15 Vdc, I
(V
(V
S
(V
= 24 A, d/dt = 100 A/µs)
DD
DS
GS
DS
R
GS
gen
= 0, I
= 250 V, I
= 400 V, I
f = 1.0 MHz)
V
GSF
GSR
= 25 V, V
= 10 Vdc, I
GS
= 4.3 ohms)
D
D
UNCLAMPED DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS (T
(1) V
(2) Pulse width and frequency is limited by T
= 20 Vdc, V
= 10 V)
= 20 Vdc, V
400V (Per MOSFET)
= 12A Adc)
= 0.25 mA)
Single Pulse Drain-To-Source Avalanche Energy
Repetitive Pulse Drain-To-Source Avalanche Energy
D
D
GS
= 24 A,
= 24 A,
DD
D
= 0,
= 13 Adc)
= 50V, I
DS
DS
= 0)
= 0)
D
= 10A
V
Symbol
V
V
(BR)DSS
r
I
I
GSSR
DS(on)
C
t
t
I
GSSF
GS(th)
DS(on)
C
C
d(on)
Q
Q
V
DSS
g
d(off)
Q
t
(T
on
t
FS
iss
oss
rss
t
t
SD
rr
r
f
gs
gd
g
C
= 25° unless otherwise noted)
Min.
400
2.0
1.5
14
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4000
Typ.
550
110
110
500
J(max)
3.0
1.1
35
95
80
80
20
80
**
-
-
-
-
-
-
-
-
-
-
and thermal response.
Max.
1000
0.25
0.20
100
100
1.0
4.0
3.5
5.0
5.0
14
1.6
-
-
-
-
-
-
-
-
-
-
-
mAdc
mhos
nAdc
nAdc
Ohm
Unit
Vdc
Vdc
Vdc
0nC
Vdc
pF
ns
ns
T
T
J
J
= 25°C
= 100°C
* Indicates Pulse Test = 300 µsec, Duty Cycle = 2%
** Limited by circuit inductance
ELECTRICAL CHARACTERISTICS:
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
SOURCE DRAIN DIODE CHARACTERISTICS
Drain-Source Breakdown Voltage (V
Zero Gate Voltage Drain
Gate-Body Leakage Current, Forward (V
Gate-Body Leakage Current, Reverse (V
Gate-Threshold Voltage
Static Drain-Source On-Resistance (V
Drain-Source On-Voltage (V
Forward Transconductance (V
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Time
(V
(V
(V
(T
(I
(I
D
D
DS
DS
DS
J
= 24 A)
= 12 A, T
= 125° C)
= 500 V, V
= 500 V, V
= V
J
< 150°)
GS
Characteristic
, I
J
D
= 125° C)
= 0.25 mAdc
W
W
GS
GS
Symbol
= 0)
= 0, T
DSS
DSS
J
(1)
(2)
= 125° C)
GS
*
DS
= 10 Vdc)
(I
= 15 Vdc, I
(V
(V
S
(V
= 24 A, d/dt = 100 A/µs)
GS
DD
DS
DS
R
GS
gen
= 0, I
= 250 V, I
= 400 V, I
f = 1.0 MHz)
V
GSF
GSR
= 25 V, V
= 10 Vdc, I
GS
= 4.3 ohms)
D
D
= 20 Vdc, V
= 10 V)
= 20 Vdc, V
500V (Per MOSFET)
= 0.25 mA)
= 13 Adc)
Value
1000
D
D
160
GS
25
= 24 A,
= 24 A,
D
= 0,
= 13 Adc)
DS
DS
= 0)
= 0)
V
Unit
Symbol
V
V
r
mJ
(BR)DSS
I
I
DS(on)
t
t
I
GSSF
GSSR
DS(on)
C
C
V
GS(th)
g
C
d(on)
d(off)
Q
Q
(T
DSS
Q
t
t
FS
oss
t
t
SD
on
iss
rss
gs
gd
rr
r
f
g
C
= 25° unless otherwise noted)
Min.
500
2.0
1.5
13
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
4000
480
115
500
3.0
1.1
95
32
95
75
75
20
60
**
-
-
-
-
-
-
-
-
-
-
Max.
0.25
0.27
1000
100
100
140
1.0
4.0
3.5
8.0
8.0
1.6
-
-
-
-
-
-
-
-
-
-
-
mAdc
nAdc
nAdc
mhos
Unit
Ohm
Vdc
Vdc
Vdc
Vdc
nC
pF
ns
ns