OM6508SA International Rectifier Corp., OM6508SA Datasheet

OM6508SA

Manufacturer Part Number

OM6508SA

Description

500 Volt, 5 And 10 Amp, N-channel Igbt With A Soft Recovery Diode In A Hermetic Metal Package

Manufacturer

International Rectifier Corp.

Datasheet

1.OM6508SA.pdf (2 pages)

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INSULATED GATE BIPOLAR TRANSISTOR

(IGBT) IN A HERMETIC TO-254AA PACKAGE

4 11 R2

Supersedes 2 07 R1

FEATURES

• Isolated Hermetic Metal Package

• High Input Impedance

• Low On-Voltage

• High Current Capability

• Fast Turn-Off

• Low Conductive Losses

• Available Screened To MIL-S-19500, TX, TXV And S Levels

• Free Wheeling Diode

• Ceramic Feedthroughs Available

DESCRIPTION

This power module includes an IGBT power transistor which features a high

impedance insulated gate and the low on-resistance characteristics of bipolar

transistor with a free wheeling diode connected across the emitter and collector.

These devices are ideally suited for motor drives, UPS converters, power supplies

and resonant power converters.

MAXIMUM RATINGS

Gate

OM6508SA

OM6509SA

Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA.

NUMBER

SCHEMATIC

PART

MOD PAK

Collector

Emitter

IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.

@ 90°C, A

500 Volt, 5 And 10 Amp, N-Channel IGBT

With a Soft Recovery Diode

In A Hermetic Metal Package

(Cont.)

(BR)CES

500

PACKAGE OPTIONS

PIN CONNECTION

Pin 1: Collector

Pin 2: Emitter

Pin 3: Gate

@ 25°C Unless Specified Otherwise

3.1 - 147

Z-TAB

CE (sat)

2.8

(Typ.)

MECHANICAL OUTLINE

.144 DIA.

.685

.665

.045

.035

(Typ.)

400

.545

.535

.150 TYP.

.800

.790

.550

.510

°C/W

3.8

3.0

q q

.550

.530

6 PIN SIP

.260

.249

.150 TYP.

.050

.040

.005

150

°C

OM6508SA

OM6509SA

3.1

Related parts for OM6508SA

OM6508SA Summary of contents

Page 1

... PIN CONNECTION Pin 1: Collector .550 Pin 2: Emitter .510 Pin 3: Gate .045 .035 .150 TYP. PACKAGE OPTIONS Z-TAB 3.1 - 147 OM6508SA OM6509SA 3 °C 35 150 42 150 .050 .040 .005 .150 TYP. .260 .249 6 PIN SIP ...

Page 2

... PRELIMINARY DATA: OM6508SA IGBT CHARACTERISTICS Parameter - OFF (see Note 1) Min. Typ. Max. Units Test Conditions V Collector Emitter 500 V V (BR)CES CE Breakdown Voltage I = 250 µ Zero Gate Voltage 0. CES CE Drain Current 1 Gate Emitter Leakage ±100 nA V GES ...

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