MBM29PDS322TE Fujitsu Microelectronics, Inc., MBM29PDS322TE Datasheet
MBM29PDS322TE
Related parts for MBM29PDS322TE
MBM29PDS322TE Summary of contents
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... CMOS 32M (2M 16) BIT MBM29PDS322TE/BE DESCRIPTION The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 63-ball FBGA package. This device is designed to be programmed in system with standard system 1 supply. 12 also be reprogrammed in standard EPROM programmers. ...
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... MBM29PDS322TE/BE (Continued) The device provides truly high performance non-volatile Flash memory solution. The device offers fast page access times with random access times of 100 ns and 115 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls ...
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... Hardware method disables any combination of sector groups from program or erase operations. • Sector Group Protection Set function by Extended sector group protection command • Fast Programming Function by Extended Command • Temporary sector group unprotection Temporary sector group unprotection via the RESET pin. MBM29PDS322TE/BE 2 PROMs. 10/11 3 ...
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... MBM29PDS322TE/BE Table 1: MBM29PDS322TE/BE Device Bank Division Device Organization Part Number MBM29PDS322TE/BE 4 10/11 Bank 1 Megabits Sector Sizes Eight 4 Kword Mbit seven 32 Kword Bank 2 Megabits Sector Sizes 28 Mbit Fifty-six 32 Kword ...
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... WE RESET C4 D4 RY/BY WP/ACC N. N. Peripheral balls on each corner are shorted together via the substrate but not connected to the die. MBM29PDS322TE/BE (TOP VIEW) (Marking Side N. ...
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... MBM29PDS322TE/BE PIN DESCRIPTION Table 2: MBM29PDS322TE/BE Pin Configuration Pin name RY/BY RESET WP/ACC N. 10/11 Function Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Ready/Busy Output Hardware Reset Pin/Temporary Sector Group Unprotection Hardware Write Protection/Program Acceleration ...
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... BLOCK DIAGRAM State RESET Control WE CE & OE Command WP/ACC Register LOGIC SYMBOL 21 MBM29PDS322TE/BE Bank 2 address Cell Matrix (Bank 2) X-Decoder RY/BY Status Control X-Decoder Cell Matrix (Bank 1) Bank 1 address RY/BY WE RESET ...
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... MBM29PDS322TE/BE DEVICE BUS OPERATION Table 3: MBM29PDS322TE/BE User Bus Operations Operation Auto-Select Manufacturer L Code * 1 Auto-Select Device Code * 1 L Extended Auto-Select Device L Code * 1 Read * 3 L Standby H Output Disable L Write (Program/Erase) L Enable Sector Group L Protection * Verify Sector Group Protection Temporary Sector Group ...
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... Table 4: MBM29PDS322TE/BE Command Definitions Bus First Bus Command Write Write Cycle Sequence Cycles Req’d Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Read/Reset Word 1 XXXh F0h Read/Reset Word 3 555h AAh 2AAh 55h Auto Word 3 555h AAh 2AAh 55h ...
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... MBM29PDS322TE/ Address of the sector to be erased. The combination will uniquely select any sector Bank Address (A 4.RD = Data read from location RA during the read operation Data to be programmed at location PA. Data is latched on the falling edge of write pulse. 5.SPA = Sector group address to be protected. Set sector group address (SGA) and ( Sector group protection verify data ...
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... Table 5.1 MBM29PDS322TE Sector Group Protection Verify Autoselect Codes Type Manufacture’s Code BA Device Code Word BA *2 Word BA *2 Extended Device Code * 3 Word BA *2 Sector Group Sector Group Protection Addresses *1:Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses. ...
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... MBM29PDS322TE/BE Table 5.3 MBM29PDS322BE Sector Group Protection Verify Autoselect Codes Type Manufacture’s Code BA Device Code Word BA Word BA Extended Device Code * 3 Word BA Sector Group Sector Group Protection Addresses *1:Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses. ...
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... FLEXIBLE SECTOR-ERASE ARCHITECTURE Table 6.1 Sector Address Tables (MBM29PDS322TE) Bank Sector Bank Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 ...
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... SA61 1 1 SA62 1 1 Bank 1 SA63 1 1 SA64 1 1 SA65 1 1 SA66 1 1 SA67 1 1 SA68 1 1 SA69 1 1 SA70 1 1 MBM29PDS322TE Top Boot Sector Architecture 14 10/11 Sector Address ...
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... SA44 SA43 SA42 SA41 SA40 SA39 SA38 SA37 SA36 SA35 MBM29PDS322TE/BE Sector Address ...
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... MBM29PDS322TE/BE (Continued) Bank Sector Bank Address SA34 0 1 SA33 0 1 SA32 0 1 SA31 0 1 SA30 0 1 SA29 0 1 SA28 0 1 SA27 0 1 SA26 0 1 SA25 0 1 Bank 2 SA24 0 1 SA23 0 1 SA22 0 0 SA21 0 0 SA20 0 0 SA19 0 0 SA18 ...
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... Table 7.1 Sector Group Address Table (MBM29PDS322TE) (Top Boot Block) Sector Group SGA0 SGA1 SGA2 SGA3 SGA4 SGA5 SGA6 SGA7 SGA8 SGA9 SGA10 SGA11 SGA12 SGA13 ...
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... MBM29PDS322TE/BE Table 7.2 Sector Group Address Table (MBM29PDS322BE) (Bottom Boot Block) Sector Group SGA0 0 0 SGA1 0 0 SGA2 0 0 SGA3 0 0 SGA4 0 0 SGA5 0 0 SGA6 0 0 SGA7 0 0 SGA8 0 0 SGA9 0 0 SGA10 0 0 SGA11 0 0 SGA12 0 1 SGA13 ...
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... OE is the output control and should be used to gate data to the output pins if the device is selected. Fast Page mode accesses are obtained by keeping A word, within that page. See Figure 5.4 for timing specifications. MBM29PDS322TE/BE ) with zero latency. 15 seven sectors) and Bank 2 (32 KW ...
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... MBM29PDS322TE/BE Standby Mode There are two ways to implement the standby mode on the device, one using both the CE and RESET pins; the other via the RESET pin only. When using both pins, a CMOS standby mode is achieved with CE and RESET inputs both held at V Under this condition, the current consumed is less than 5 A Max ...
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... for the other addresses pins), and write extended sector group protection command (60h). A sector group is MBM29PDS322TE/BE , while and address pin A ID ...
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... SA69 and SA70, MBM29PDS322BE: SA0 and SA1) If the system asserts V on the WP/ACC pin, the device reverts to whether the two outermost 4K word boot IH sectors were last set to be protected or unprotected ...
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... To terminate the operation necessary to write the Read/Reset command sequence into the register. To execute the Autoselect command during the operation, writing Read/Reset command sequence must precede the Autoselect command. MBM29PDS322TE/ and high voltage ...
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... MBM29PDS322TE/BE Word Programming The device is programmed on a word-by-word basis. Programming is a four bus cycle operation. There are two “unlock” write cycles. These are followed by the program set-up command and data write cycles. Addresses are latched on the falling edge WE, whichever happens later and the data is latched on the rising edge WE, whichever happens first ...
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... Multiple Sector Erase Time; [Sector Erase Time + Sector Program Time (Preprogramming)] Number of Sector Erase In case of multiple sector erase across bank boundaries, a read from bank (read-while-erase) can not perform. Figure 21 illustrates the Embedded Erase MBM29PDS322TE/BE ” otherwise that command will not be accepted and TOW to determine if the sector erase timer window is still open, see section 3 ” ...
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... MBM29PDS322TE/BE Erase Suspend/Resume The Erase Suspend command allows the user to interrupt a Sector Erase operation and then perform data reads from or programs to a sector not being erased. This command is applicable ONLY during the Sector Erase operation which includes the time-out period for sector erase. Writing the Erase Suspend command (B0h) during the Sector Erase time-out results in immediate termination of the time-out period and suspension of the erase operation ...
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... The Hi-ROM region is 32 Kwords in length and is stored at the same address as the sectors. The MBM29PDS322TE occupies the address of the word mode 1F8000h to 1FFFFFh and the MBM29PDS322BE type occupies the address of the word mode 000000h to 007FFFh. After the system has written the Enter Hi- ROM command sequence, the system may read the Hi-ROM region by using the addresses normally occupied by the boot sectors ...
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... MBM29PDS322TE/BE Hidden ROM (Hi-ROM) Protect Command There are two methods to protect the Hidden ROM area. One is to write the sector group protect setup com- mand(60h), set the sector address in the Hidden ROM area and (A sector group protect command(60h) during the Hidden ROM mode. The same command sequence could be used because the same as the extension sector group protect in the past except that the Hidden ROM mode and it does not apply high voltage to RESET pin. Please refer to “ ...
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... Mode *: Successive reads from the erasing or erase-suspend sector will cause DQ suspend sector address will indicate logic “1” at the DQ Note 1.DQ and DQ are reserve pins for future use 2.DQ is Fujitsu internal use. 4 MBM29PDS322TE/BE Table 9 Hardware Sequence Flags Data ...
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... MBM29PDS322TE/ Data Polling The device features Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm an attempt to read device will produce a complement of data last written to DQ read device will produce true data last written to DQ device will produce a “ ...
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... DQ toggles if this bit is read from an erasing sector operate toggle bit function properly must be high when bank address is changed. MBM29PDS322TE/BE never stop toggling. Once device has exceeded timing limits, the high (“1”) the internally controlled erase 3 were high on the second status check, the command may not have ...
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... MBM29PDS322TE/BE Reading Toggle Bits DQ / Whenever the system initially begins reading toggle bit status, it must read DQ determine whether a toggle bit is toggling. Typically, a system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first ...
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... Writing is inhibited by holding any one must be a logical zero while logical one. Power-Up Write Inhibit Power-up of the device with The internal state machine is automatically reset to the read mode on power-up. MBM29PDS322TE/BE ramp up to insure that device power up correctly ...
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... OUT ACC , OE and RESET pins is –0.5 V. During voltage transitions –2.0 V for periods ns. Voltage difference between input SS ) does not exceed +9.0V. Maximum DC input voltage Part No. MBM29PDS322TE/BE 10/11 A MBM29PDS322TE/BE 10/11 CC Rating Unit Min. Max. –55 +125 °C –40 +85 °C –0 – ...
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... MAXIMUM OVERSHOOT / UNDERSHOOT 0 0.5 V 2.0 V Figure 1 Maximum Undershoot Waveform Figure 2 Maximum Overshoot Waveform 1 12 Note: This waveform is applied for A Figure 3 Maximum Overshoot Waveform 2 MBM29PDS322TE/ and RESET 9 10/11 35 ...
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... MBM29PDS322TE/BE ELECTRICAL CHARACTERISTICS 1. DC Characteristics Parameter Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage 9 Current 1 V Active Current * CC V Active Current * Current (Standby Current (Standby, Reset Current CC 3 (Automatic Sleep Mode Active Current * 5 CC (Read-While-Program) V Active Current * ...
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... CE or OE, Whichever Occurs First RESET Pin Low to Read Mode Note: Test Conditions: Output Load Input rise and fall times Input pulse levels: 0 2.0 V Timing measurement reference level Input: 1.0 V Output: 1.0 V MBM29PDS322TE/BE Symbol Conditions JEDEC Standard t t — AVAV ...
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... MBM29PDS322TE/BE • Write/Erase/Program Operations Parameter Write Cycle Time Address Setup Time Address Setup Time to OE Low During Toggle Bit Polling Address Hold Time Address Hold Time from High During Toggle Bit Polling Data Setup Time Data Hold Time Read Output Enable ...
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... Erase Time-out Time Erase Suspend Transition Time Power On / Off Time *1: This does not include the preprogramming time. *2: This timing is for Sector Group Protection operation. *3: This timing is for Accelerated Program operation. MBM29PDS322TE/BE Symbol 10 JEDEC Standard Min. Typ. Max. Min. Typ. Max. — ...
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... MBM29PDS322TE/BE ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Word Programming Time Chip Programming Time Program/Erase Cycle FBGA PIN CAPACITANCE Parameter Input Capacitance Output Capacitance Control Pin Capacitance WP/ACC Pin Capacitance Note: Test conditions T = 25° 1.0 MHz A 40 10/11 Limits Min. Typ. ...
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... TIMING DIAGRAM • Key to Switching Waveforms WAVEFORM Address High-Z Outputs Figure 5.1 Read Operation Timing Diagram MBM29PDS322TE/BE INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from from May Will Be Change Changing from from "H" or "L": ...
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... MBM29PDS322TE/BE Address RESET High-Z Outputs Figure 5.2 Hardware Reset/Read Operation Timing Diagram 42 10/ Address Stable t ACC Outputs Valid t OH ...
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... OEH WE High-Z Output Figure 5.3 Page Read Operation Timing Diagram MBM29PDS322TE/BE Same Page Addresses PRC t ACC PACC PACC 10/ ...
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... MBM29PDS322TE/BE 3rd Bus Cycle Address 555h GHWL A0h Data Notes: 1.PA is address of the memory location to be programmed. 2.PD is data to be programmed at word address. 3.DQ is the output of the complement of the data written to the device. 7 4.D is the output of the data written to the device. ...
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... OUT 5.Figure indicates last two bus cycles out of four bus cycle sequence. Figure 7 Alternate CE Controlled Program Operation Timing Diagram MBM29PDS322TE/BE Data Polling ...
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... MBM29PDS322TE/BE Address 555h GHWL WE Data t VCS the sector address for Sector Erase. Addresses = 555h for Chip Erase. Figure 8 Chip/Sector Erase Operation Timing Diagram 46 10/11 2AAh 555h 555h WPH AAh 55h 80h ...
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... OEH WE Data Data BUSY RY/ Valid Data (The device has completed the Embedded operation). 7 Figure 9 Data Polling during Embedded Algorithm Operation Timing Diagram MBM29PDS322TE/ Valid Data t WHWH1 Output Flag ...
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... MBM29PDS322TE/ OES OE Data ( stops toggling (The device has completed the Embedded operation). 6 Figure 10 Toggle Bit I during Embedded Algorithm Operation Timing Diagram 48 10/11 t OEH Toggle DQ Toggle Stop Toggle Data Valid t OE ...
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... Figure 11 Bank-to-Bank Read/Write Timing Diagram Enter Erase Embedded Suspend Erasing WE Erase Suspend Erase Read Toggle DQ and with OE Note read from the erase-suspended sector. 2 MBM29PDS322TE/BE Read Command Read BA2 BA2 BA1 BA1 (555h) (PA) t ACC ...
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... MBM29PDS322TE/ RY/BY Figure 13 RY/BY Timing Diagram during Program/Erase Operation Timing Diagram WE RESET RY/BY 50 10/11 The rising edge of the last WE signal t BUSY READY Figure 14 RESET, RY/BY Timing Diagram Entire programming or erase operations RB ...
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... PS RESET 1 Address Data t RH Figure 15 Power On / Off Timing Diagram MBM29PDS322TE/BE Valid Data In Valid Data Out t ACC 10/ 1 ...
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... MBM29PDS322TE/ VLHT VLHT WE CE Data t VCS V CC SPAX: Sector Group Address for initial sector SPAY: Sector Group Address for next sector ...
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... VIDR t VCS RESET VLHT RY/BY Figure 17 Temporary Sector Group Unprotection Timing Diagram MBM29PDS322TE/BE Program or Erase Command Sequence Unprotection period 10/11 t VLHT t VLHT 53 ...
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... MBM29PDS322TE/ VCS RESET t VLHT t VIDR Address Data SPAX: Sector Group Address to be protected SPAY: Next Sector Group Address to be protected TIME-OUT: Time-Out window = 250 s (Min.) Figure 18 Extended Sector Group Protection Timing Diagram 54 10/ ...
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... VACCR t VCS V ACC V IH WP/ACC VLHT RY/BY Figure 19 Accelerated Program Timing Diagram MBM29PDS322TE/BE Program or Erease Command Sequence Acceleration period 10/11 t VLHT t VLHT 55 ...
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... MBM29PDS322TE/BE FLOW CHARTS EMBEDDED ALGORITHM Increment Address 56 10/11 Start Write Program Command Sequence (See Below) Data Polling No Verify Data ? Yes No Last Address ? Yes Programming Completed Program Command Sequence (Address/Command) 555h/AAh 2AAh/55h 555h/A0h Program Address/Program Data Figure 20 Embedded Program TM Algorithm Embedded Program Algorithm ...
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... EMBEDDED ALGORITHM No Chip Erase Command Sequence (Address/Command) 555h/AAh 2AAh/55h 555h/80h 555h/AAh 2AAh/55h 555h/10h Figure 21 Embedded Erase MBM29PDS322TE/BE Start Write Erase Command Sequence (See Below) Data Polling Embedded Erase Algorithm in progress Data FFh ? Yes Erasure Completed Individual Sector/Multiple Sector Erase Command Sequence ...
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... MBM29PDS322TE/ rechecked even 10/11 Start Read Byte ( VA=Address for programming 7 0 Addr. VA =Any of the sector address within the sector being erased during Yes sector erase or multiple sector DQ Data? 7 erases operation =Any of the sector addresses No within the sector not being ...
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... Read DQ Read DQ No Read DQ *1: Read toggle bit twice to determine whether or not it is toggling. *2: Recheck toggle bit because it may stop toggling as DQ Figure 23 Toggle Bit Algorithm MBM29PDS322TE/BE Start VA=Bank address being executed Addr. VA Embedded Algorithm Addr ...
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... MBM29PDS322TE/BE Increment PLSCNT PLSCNT Remove V Write Reset Command Device Failed Figure 24 Sector Group Protection Algorithm 60 10/11 Start Setup Sector Group Addr PLSCNT RESET Activate WE Pulse ...
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... Program Operations Temporary Sector Group Unprotection Completed *1: All protected sector groups are unprotected. *2: All previously protected sector groups are protected once again. Figure 25 Temporary Sector Group Unprotection Algorithm MBM29PDS322TE/BE Start RESET Perform Erase or RESET 10/11 61 ...
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... MBM29PDS322TE/BE Device is Operating in Temporary Sector Group Unprotection Mode Increment PLSCNT No PLSCNT 25? Yes Remove V from RESET ID Write Reset Command Device Failed Figure 26 Extended Sector Group Protection Algorithm 62 10/11 Start RESET V ID Wait Extended Sector Group Protection Entry? Yes To Setup Sector Group Protection ...
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... FAST MODE ALGORITHM Increment Address Figure 27 Embedded Program MBM29PDS322TE/BE Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data Polling No Verify Data? Yes No Last Address? Yes Programming Completed XXXh/90h XXXh/F0h TM Algorithm for Fast Mode 10/11 Set Fast Mode In Fast Program Reset Fast Mode ...
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... Fujitsu standard products are available in several packages. The order number is formed by a combination of: MBM29PDS322 T E DEVICE NUMBER/DESCRIPTION MBM29PDS322 32 Mega-bit (2 M 1.8 V-only Read, Program, and Erase Valid Combinations MBM29PDS322TE/BE 64 10/11 10 PBT PACKAGE TYPE PBT =63-Ball Fine pitch Ball Grid Array Package (FBGA) SPEED OPTION ...
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... PACKAGE DIMENSION 63-pin plastic FBGA (BGA-63P-M01) 11.00±0.10(.433±.004) INDEX AREA 0.10(.004) 1999 FUJITSU LIMITED B63001S-1C-1 C MBM29PDS322TE/BE +0.15 1.05 –0.10 +.006 .041 –.004 (Mounting height) 0.38±0.10 (.015±.004) (Stand off) (4.00(.157)) 7.00±0.10 (.276±.004) (5.60(.220 10/11 (8.80(.346)) (7.20(.283)) (5.60(.220)) ...
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... MBM29PDS322TE/BE FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3386 http://edevice.fujitsu.com/ North and South America FUJITSU MICROELECTRONICS, INC. ...