TIM3742-30SL TOSHIBA Semiconductor CORPORATION, TIM3742-30SL Datasheet

TIM3742-30SL

Manufacturer Part Number

TIM3742-30SL

Description

Microwave Power Gaas Fet

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.TIM3742-30SL.pdf (4 pages)

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u The information contained herein is presented only as a guide for the applications of our products. No responsibility is

MICROWAVE SEMICONDUCTOR

TECHNICAL DATA

n LOW INTERMODULATION DISTORTION

n HIGH POWER

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

ELECTRICAL CHARACTERISTICS ( Ta= 25 C )

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

FEATURES

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Output Power at 1dB Gain

Compression Point

Power Gain at 1dB Gain

Compression Point

Drain Current

Gain Flatness

Power Added Efficiency

3rd Order Intermodulation

Distortion

Drain Current

Channel Temperature Rise

Recommended gate resistance(Rg) : Rg= 28 (MAX.)

Transconductance

Pinch-off Voltage

Saturated Drain Current

Gate-Source Breakdown

Voltage

Thermal Resistance

IM3=-45 dBc at Po= 34.5 dBm,

Single Carrier Level

P1dB=45.0 dBm at 3.7GHz to 4.2GHz

CHARACTERISTICS

SYMBOL

th(c-c)

GSoff

DS1

DS2

DSS

GSO

Tch

1dB

add

Channel to Case

(VDS X IDS + Pin – P1dB)

(Single Carrier Level)

= 10A

= 100mA

= -350 A

Two-Tone Test

= 3.7 to 4.2GHz

CONDITIONS

= 3V

Po=34.5 dBm

= 0V

n HIGH GAIN

n BROAD BAND INTERNALLY MATCHED FET

n HERMETICALLY SEALED PACKAGE

X Rth(c-c)

G1dB=10.0dB at 3.7GHz to 4.2GHz

MICROWAVE POWER GaAs FET

=10

TIM3742-30SL

UNIT

dBm

dBc

C/W

MIN.

44.0

MIN.

-1.0

-42

9.0

-5

Rev. Jun. 2006

TYP. MAX.

45.0

10.0

TYP. MAX.

6300

7.0

-45

7.0

-2.5

1.0

100

8.0

-4.0

0.8

1.3

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TIM3742-30SL Summary of contents

Page 1

... SYMBOL CONDITIONS 10A GSoff 100mA DSS -350 A GSO GS R Channel to Case th(c-c) TIM3742-30SL UNIT MIN. TYP. MAX. dBm 44.0 45.0 dB 9.0 10 dBc -42 -45 A 7.0 C UNIT MIN. TYP. MAX. mS 6300 V -1.0 -2 C/W 1.0 Rev. Jun. 2006 8 ...

Page 2

... Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc Channel Temperature Storage PACKAGE OUTLINE (2-16G1B) 4 – C1.0 (2) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. TIM3742-30SL SYMBOL ...

Page 3

... RF PERFORMANCE Output Power (Pout) vs. Frequency V =10V Pin=35.0dBm 3.3 Output Power(Pout) vs. Input Power(Pin) 48 freq.=4.2GHz 47 V =10V TIM3742-30SL 3.4 3.5 Frequency (GHz) Pout add 32 34 Pin(dBm ...

Page 4

... Power Dissipation(PT) vs. Case Temperature(Tc) 120 100 IM3 vs. Output Power Characteristics -10 V =10V freq.=4.2GHz -20 f=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM3742-30SL 80 120 Tc 200 160 38 40 ...

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