TIM6472-6UL TOSHIBA Semiconductor CORPORATION, TIM6472-6UL Datasheet
TIM6472-6UL
Available stocks
Related parts for TIM6472-6UL
TIM6472-6UL Summary of contents
Page 1
... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM6472-6UL n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE SYMBOL ...
Page 2
... Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc Channel Temperature Storage PACKAGE OUTLINE (2-11D1B) 4-C1.2 (2) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. TIM6472-6UL SYMBOL ...
Page 3
... RF PERFORMANCE 42 VDS= 10V IDS 1.6A 41 Pin= 29.0dBm 6 6.8GHz VDS= 10V 39 IDS 1. TIM6472-6UL Output Power vs. Frequency 6.4 6.6 6.8 7 Frequency (GHz) Output Power vs. Input Power Pin (dBm) 3 7.2 7.4 7 ηadd ...
Page 4
... TIM6472-6UL Power Dissipation vs. Case Temperature (℃) IM3 vs. Output Power Characteristics -20 VDS= 10V IDS 1.6A f= 6.8GHz f= 5MHz -30 -40 -50 - Po(dBm), Single Carrier Level 120 160 200 ...