NIS5101 ON Semiconductor, NIS5101 Datasheet - Page 3

• Manufacturer Part Number: NIS5101
• Description: Smart Hotplug Ic/inrush Limiter/circuit Breaker
• Manufacturer: ON Semiconductor

2. Pulse Test: Pulse width 300 ms, duty cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
4. Verified by design.
5. Please refer to explanation about the device’s current limit operation in short circuit and overload conditions.
ELECTRICAL CHARACTERISTICS
POWER FET
THERMAL LIMIT
OVER/UNDERVOLTAGE
CURRENT LIMIT
TOTAL DEVICE
Charging Time (Turn−On to Rated Max Current)
ON Resistance
Zero Gate Voltage Drain Current
(V
Sense Voltage Tolerance (V
Output Capacitance (V
Shutdown Junction Temperature (Note 4)
Hysteresis (Note 4)
Turn−On Voltage (Rext
Hysteresis (Rext
Turn−On Voltage (Rext
Hysteresis (Rext
Zener Voltage (UVLO Pin Voltage at Turn−On)
OVLO Threshold (Input + Increasing, Rext
OVLO Threshold (Input + Increasing, Rext
OVLO Hysteresis (Input + Decreasing, Rext
Short Circuit Current Limit (RextI
Overload Current Limit (RextI
Bias Current (Operational) (V
Bias Current (Non−Operational) (V
Minimum Operating Voltage (R
DS
= 100 V
dc
, V
UVLO
UVLO
GS
= 0 V
= R)
= 270 kW)
DS
UVLO
UVLO
= 48 V
dc
input
)
= R)
= 270 kW)
input
LIMIT
UVLO
= 48 V, RextI
dc
LIMIT
= 48 V, R
Characteristic
, V
input
= 20 W) (Notes 4 and 5)
= 30 kW)
GS
= 20 W) (Note 5)
= 30 V, R
= 0 V
(T
OVLO
OVLO
UVLO
OVLO
j
= 25°C unless otherwise noted.)
LIMIT
dc
, f = 10 kHz)
= R)
= 300 kW)
UVLO
= R)
= 300 kW)
= 20 W)
= R)
http://onsemi.com
NIS5101
3
Symbol
V
V
R
Vin
V
V
T
OVhyst
I
I
I
I
I
V
V
t
Sense
T
V
V
LIM1
LIM2
DSon
DSS
Bias
Bias
V
chg
hyst
hyst
hyst
−
SD
OV
OV
on
on
Z
min
41.5
14.3
Min
125
100
6.3
3.5
3.0
3.5
5.4
35
29
65
−
−
−
−
−
−
−
−
Typ
326
135
800
5.0
3.0
8.0
5.0
4.7
4.2
6.0
1.4
43
10
40
46
33
16
74
18
−
Max
50.5
17.5
145
9.7
6.5
6.4
5.0
6.6
50
45
37
83
−
−
−
−
−
−
−
−
Unit
mW
ms
mA
mA
mA
pF
°C
°C
%
V
V
V
V
V
V
V
V
A
A
V