Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Features
•
•
•
•
•
•
•
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Peak Pulse Collector Current
Base Current
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capactiance
Notes:
DN0150ALP4 / DN0150BLP4
Document number: DS31492 Rev. 2 - 2
Epitaxial Die Construction
Ultra-Small Leadless Surface Mount Package
Ultra Low Profile (0.4mm max)
Complementary PNP Type Available (DP0150ALP4 /
DP0150BLP4)
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q 101 Standards for High Reliability
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2%
Characteristic
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
DN0150ADJ
DN0150BDJ
@T
A
= 25°C unless otherwise specified
Bottom View
V(
V(
V(
Symbol
V
CE(SAT)
BR)CBO
BR)CEO
BR)EBO
I
I
www.diodes.com
h
C
CBO
EBO
f
FE
T
ob
1 of 4
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Min
120
200
Mechanical Data
•
•
•
•
•
•
•
•
60
50
60
—
—
—
—
5
Symbol
Symbol
T
J
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V
V
V
R
, T
I
P
CBO
CEO
EBO
CM
3
I
I
Case: DFN1006H4-3
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections Indicator: Collector Dot
Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Ordering Information: See Page 3
Marking Information: See Page 3
Weight: 0.0008 grams (approximate)
θ JA
C
B
D
STG
C
Device Schematic
0.10
Typ
1.3
—
—
—
—
—
—
—
—
Top View
Max
0.25
240
400
0.1
0.1
—
—
—
—
—
E
B
DN0150ALP4 / DN0150BLP4
-55 to +150
2
1
Value
Value
MHz
Unit
100
200
450
278
μA
μA
pF
60
50
30
—
V
V
V
V
5
I
I
I
V
V
I
V
V
f = 30MHz
V
f = 1MHz
C
C
E
C
CB
EB
CE
CE
CB
= 10μA, I
= 1mA, I
= 10μA, I
= 100mA, I
= 5V, I
= 60V, I
= 6V, I
= 10V, I
= 10V, I
Test Condition
B
C
C
C
E
E
E
E
= 0
= 0
= 2mA
= 0
= 0
B
= 0
= -1mA
= 0,
= 10mA
© Diodes Incorporated
°C/W
Unit
Unit
mW
mA
mA
mA
°C
V
V
V
January 2009