IS62C256AL Integrated Silicon Solution, Inc., IS62C256AL Datasheet - Page 7

• Manufacturer Part Number: IS62C256AL
• Description: 32k X 8 Low Power Cmos Static Ram
• Manufacturer: Integrated Silicon Solution, Inc.

IS65C256AL
IS62C256AL
AC WAVEFORMS
WRITE CYCLE NO. 1
Integrated Silicon Solution, Inc.
Rev. C
07/12/07
WRITE CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
4. Tested with OE HIGH.
Symbol
t
t
t
t
t
t
t
t
t
output loading specified in Figure 1.
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the write.
WC
SCS
AW
HA
SA
PWE
PWE
SD
HD
1,
2
ADDRESS
(4)
D
OUT
WE
D
CE
IN
Parameter
Write Cycle Time
CE to Write End
Address Setup Time to Write End
Address Hold from Write End
Address Setup Time
WE Pulse Width
Data Setup to Write End
Data Hold from Write End
(CE Controlled, OE is HIGH or LOW)
DATA UNDEFINED
t
SA
t
HZWE
t
VALID ADDRESS
AW
t
t
PWE1
PWE2
t
t
SCS
WC
Min.
(1,3)
25
15
15
15
12
0
0
0
HIGH-Z
(1 )
-25 ns
(Over Operating Range)
t
Max.
SD
DATA
—
—
—
—
—
—
—
—
IN
VALID
t
Min. Max.
HD
t
45
35
25
25
20
0
0
0
-45 ns
LZWE
t
HA
—
—
—
—
—
—
—
—
CS_WR1.eps
Unit
ns
ns
ns
ns
ns
ns
ns
ns
7