APT75DL60B Microsemi Corporation, APT75DL60B Datasheet - Page 2

• Manufacturer Part Number: APT75DL60B
• Description: Ultrasoft Recovery Recti?er Diode
• Manufacturer: Microsemi Corporation

DYNAMIC CHARACTERISTICS
THERMAL AND MECHANICAL CHARACTERISTICS
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
Symbol
Symbol
Torque
R
I
I
I
W
Q
RRM
Q
RRM
Q
RRM
t
t
t
t
θJC
rr
rr
rr
rr
rr
rr
rr
T
Characteristic / Test Conditions
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Package Weight
Maximum Mounting Torque
0.6
0.5
0.4
0.3
0.2
0.1
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0
10
-5
Dissipated Power
10
(Watts)
-4
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
I
F
= 1A, di
RECTANGULAR PULSE DURATION (seconds)
10
T
J
-3
F
/dt = -100A/μs, V
(°C)
0.003901
0.148
10
0.2758
-2
I
R
I
F
0.270
I
F
F
= 30V, T
= 75A, di
V
V
= 75A, di
= 75A, di
V
R
R
T
R
= 400V, T
= 400V, T
C
= 400V, T
(°C)
J
F
= 25°C
F
/dt = -1000A/μs
F
/dt = -200A/μs
/dt = -200A/μs
10
C
C
C
-1
= 125°C
= 125°C
= 25°C
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
EXT
are the external thermal
Note:
Peak T J = P DM x Z θJC + T C
Duty Factor D =
1.0
Min
t 1
Min
t 2
t 1
/
t 2
2174
4326
7215
Typ
0.22
460
597
355
Typ
5.9
56
15
42
11
APT75DL60B_S(G)
10
Max
Max
0.48
1.1
10
Amps
Amps
Amps
°C/W
Unit
Unit
lb·in
N·m
nC
nC
nC
ns
ns
ns
oz
g