APT17N80SC3 Advanced Crystal Technology, APT17N80SC3 Datasheet - Page 4

• Manufacturer Part Number: APT17N80SC3
• Description: Super Junction Mosfet
• Manufacturer: Advanced Crystal Technology

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
100
800
600
400
200
90
80
70
60
50
40
30
20
10
51
10
16
12
.1
0
0
FIGURE 16, SWITCHING ENERGY vs CURRENT
5
1
8
4
0
FIGURE 10, MAXIMUM SAFE OPERATING AREA
0
1
5
5
V
FIGURE 14, DELAY TIMES vs CURRENT
V
R
T
L = 100µH
E
diode reverse recovery.
I
DS
V
R
T
L = 100µH
T C =+25°C
T J =+150°C
SINGLE PULSE
D
DD
J
G
ON
LIMITED BY R DS (ON)
DD
J
G
OPERATION HERE
= 125°C
= 17A
= 125°C
= 5Ω
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 5Ω
= 533V
includes
20
= 533V
V DS = 400V
Q
10
10
g
, TOTAL GATE CHARGE (nC)
E
t
40
d(on)
off
V DS = 160V
10
15
15
60
I
I
D
D
(A)
(A)
80
V DS = 640V
20
20
100
E
100
t
on
d(off)
25
25
120
140
800
30
30
100µS
1mS
10mS
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
20,000
10,000
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
1000
1200
1000
100
200
100
800
600
400
200
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10
10
50
40
30
20
10
1
0
0
0
0.3
5
0
V
V
V
R
T
L = 100µH
DS
SD
J
DD
G
= 125°C
= 5Ω
5
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
= 533V
E
0.5
on
R
10
10
10 15
G
, GATE RESISTANCE (Ohms)
T J =+150°C
0.7
20
15
20 25 30 35 40
I
D
0.9
(A)
T J =+25°C
t
f
30
20
t
r
V
I
T
L = 100µH
E
diode reverse recovery.
D
DD
J
ON
1.1
= 17A
= 125°C
= 533V
includes
40
25
1.3
E
off
C oss
C rss
45 50
C iss
1.5
50
30