APT8024LVR Advanced Crystal Technology, APT8024LVR Datasheet - Page 3

• Manufacturer Part Number: APT8024LVR
• Description: Power Generation High Voltage N-channel Enhancement Mode Power Mosfets.
• Manufacturer: Advanced Crystal Technology

Case temperature. (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
35
30
25
20
15
10
0
5
0
-50
Junction
temp. (°C)
25
0
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
V DS > I D (ON) x R DS (ON)MAX.
V
I
V
D
FIGURE 4, TRANSFER CHARACTERISTICS
GS
GS
= 16.5A
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
(watts)
Power
-25
1
= 10V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
T
J
50
T
, JUNCTION TEMPERATURE (°C)
C
2
0
, CASE TEMPERATURE (°C)
T J = +25°C
T J = +125°C
25
3
75
RC MODEL
50
4
100
0.0302
0.0729
0.0955
75
5
100 125 150
6
T J = -55°C
125
7
150
8
0.00809F
0.0182F
0.264F
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.2
1.1
1.0
0.9
0.8
0.7
0.6
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
90
80
70
60
50
40
30
20
10
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0
-50
-50
0
0
V
V
GS
DS
NORMALIZED TO
FIGURE 5, R
-25
-25
10
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 10V @ 16.5A
T
5
I
J
D
, JUNCTION TEMPERATURE (°C)
T
, DRAIN CURRENT (AMPERES)
C
0
0
, CASE TEMPERATURE (°C)
20
10
V GS =15 &10 V
V GS =10V
25
DS
25
30
(ON) vs DRAIN CURRENT
V GS =20V
15
50
50
40
75
75
20
50
100 125 150
100 125 150
6.5V
25
60
7V
6V
5.5V
4.5V
5V
30
70