APTM50H15UT1G Microsemi Corporation, APTM50H15UT1G Datasheet
APTM50H15UT1G
Related parts for APTM50H15UT1G
APTM50H15UT1G Summary of contents
Page 1
... Drain - Source ON Resistance DSon P Maximum Power Dissipation D I Avalanche current (repetitive and non repetitive) AR These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM50H15UT1G V = 500V DSS R = 150mΩ typ @ Tj = 25°C DSon I = 25A @ Tc = 25°C D Application • ...
Page 2
... Peak Diode Recovery t Reverse Recovery Time rr Q Reverse Recovery Charge rr dv/dt numbers reflect the limitations of the circuit rather than the device itself. ≤ - 21A di/dt ≤ 1000A/µ APTM50H15UT1G = 25°C unless otherwise specified j Test Conditions T = 25° 500V 125°C ...
Page 3
... 298.15 K 25/ ⎡ ⎢ exp B ⎣ SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTM50H15UT1G To heatsink R T: Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ⎜ ⎟ ⎟ − ...
Page 4
... Gate Charge vs Gate to Source =21A =25° =250V 120 Gate Charge (nC) APTM50H15UT1G Low Voltage Output Characteristics =125° 250µs pulse test @ < 0.5 duty cycle ...
Page 5
... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM50H15UT1G T =25° ...