APTC60DDAM70CT1G Microsemi Corporation, APTC60DDAM70CT1G Datasheet - Page 2

• Manufacturer Part Number: APTC60DDAM70CT1G
• Description: Dual Boost Chopper Super Junction Mosfet Sic Chopper Diode
• Manufacturer: Microsemi Corporation

Dynamic Characteristics
Chopper SiC diode ratings and characteristics
Electrical Characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
R
V
V
T
T
I
I
C
C
C
Q
E
E
I
DS(on)
Q
E
E
V
Q
GS(th)
Q
DSS
GSS
d(off)
T
d(on)
T
RRM
RM
I
C
oss
off
off
iss
rss
on
on
F
gd
gs
F
C
g
r
f
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Total Capacitive Charge
Total Capacitance
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
All ratings @ T
j
Test Conditions
V
V
f = 1MHz
V
V
I
Inductive Switching @ 125°C
V
V
I
R
Inductive switching @ 25°C
V
I
Inductive switching @ 125°C
V
I
Test Conditions
V
V
V
V
V
D
D
D
D
www.microsemi.com
= 25°C unless otherwise specified
GS
GS
G
GS
DS
GS
Bus
GS
Bus
GS
GS
GS
GS
GS
= 39A
= 39A
= 39A, R
= 39A, R
= 5Ω
= 0V,V
= 0V,V
= 10V, I
= V
= ±20 V, V
= 0V
= 25V
= 10V
= 15V
= 15V, V
= 15V, V
= 300V
= 400V
Test Conditions
I
di/dt =1800A/µs
f = 1MHz, V
f = 1MHz, V
F
= 20A, V
V
I
DS
F
R
, I
=600V
= 20A
DS
DS
G
G
D
APTC60DDAM70CT1G
D
= 5Ω
= 5Ω
= 600V
= 600V
Bus
Bus
= 2.7mA
= 39A
DS
R
= 400V
= 400V
R
R
= 300V
= 0V
= 200V
= 400V
T
T
T
T
T
T
Tc = 100°C
j
j
j
j
j
j
= 25°C
= 175°C
= 25°C
= 175°C
= 25°C
= 125°C
Min
Min
600
Min
2.1
1206
2.56
0.21
Typ
100
200
130
100
Typ
259
111
402
980
657
Typ
283
1.6
20
28
84
29
21
30
2
3
7
2000
±100
Max
Max
Max
400
250
1.8
2.4
3.9
25
70
Unit
Unit
Unit
mΩ
µA
nC
µA
pF
nA
nC
nF
ns
µJ
µJ
V
A
V
V
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