APTC60SKM24CT1G Microsemi Corporation, APTC60SKM24CT1G Datasheet - Page 2

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APTC60SKM24CT1G

Manufacturer Part Number
APTC60SKM24CT1G
Description
Buck Chopper Super Junction Mosfet Sic Chopper Diode
Manufacturer
Microsemi Corporation
Datasheet
Dynamic Characteristics
CR2 SiC diode ratings and characteristics
Electrical Characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
R
V
V
T
T
I
I
C
C
Q
E
E
I
DS(on)
Q
E
E
V
Q
GS(th)
Q
DSS
GSS
T
d(off)
T
d(on)
RRM
RM
I
C
oss
off
off
iss
on
on
F
gs
gd
f
F
C
g
r
Input Capacitance
Output Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Total Capacitive Charge
Total Capacitance
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
All ratings @ T
j
Test Conditions
V
f = 1MHz
V
V
I
Inductive Switching (125°C)
V
V
I
R
Inductive switching @ 25°C
V
I
Inductive switching @ 125°C
V
I
Test Conditions
V
V
V
V
V
D
D
D
D
www.microsemi.com
= 25°C unless otherwise specified
G
GS
GS
GS
GS
Bus
GS
Bus
GS
GS
GS
GS
GS
= 95A
= 95A
= 95A ; R
= 95A ; R
= 2.5Ω
= 0V,V
= 0V,V
= 0V ; V
= 10V
= 10V
= 10V ; V
= 10V ; V
= 10V, I
= V
= ±20 V, V
= 300V
= 400V
Test Conditions
V
I
I
di/dt =1200A/µs
f = 1MHz, V
f = 1MHz, V
F
F
R
= 40A
= 40A, V
=600V
DS
, I
DS
DS
G
G
D
D
DS
= 600V
= 600V
= 2.5Ω
= 2.5Ω
= 5mA
Bus
Bus
= 47.5A
= 25V
DS
APTC60SKM24CT1G
R
= 400V
= 400V
R
R
= 300V
= 0V
= 200V
= 400V
T
T
T
Tc = 100°C
T
T
T
j
j
j
j
j
j
= 25°C
= 25°C
= 175°C
= 175°C
= 25°C
= 125°C
Min
Min
600
Min
2.1
1040
1320
1270
14.4
Typ
300
102
100
810
Typ
200
400
260
200
Typ
1.6
2.0
17
21
30
45
68
40
56
3
Max
4000
Max
Max
800
350
600
200
1.8
2.4
3.9
24
Unit
Unit
Unit
µA
nC
µA
nC
pF
nA
nF
ns
µJ
µJ
V
A
V
V
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