APTGF90DA60CT1G Microsemi Corporation, APTGF90DA60CT1G Datasheet - Page 2

• Manufacturer Part Number: APTGF90DA60CT1G
• Description: Boost Chopper Npt Igbt Sic Chopper Diode
• Manufacturer: Microsemi Corporation

Electrical Characteristics
Dynamic Characteristics
Chopper SiC diode ratings and characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
V
V
V
T
T
T
T
I
I
C
C
E
I
CE(sat)
Q
E
GE(th)
V
Q
CES
GES
T
d(off)
T
T
d(off)
T
I
d(on)
d(on)
RRM
RM
I
C
off
sc
ies
res
on
F
G
f
f
F
C
r
r
Zero Gate Voltage Collector Current
Collector Emitter Saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Reverse Transfer Capacitance
Gate charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Short Circuit data
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Total Capacitive Charge
Total Capacitance
All ratings @ T
j
www.microsemi.com
= 25°C unless otherwise specified
V
R
Test Conditions
I
di/dt =1200A/µs
f = 1MHz, V
f = 1MHz, V
Test Conditions
V
I
V
V
Test Conditions
V
f = 1MHz
V
I
Inductive Switching (25°C)
V
V
I
R
Inductive Switching (125°C)
V
V
I
R
V
V
I
V
t
p
F
C
C
C
C
C
G
GE
G
G
GE
GE
GE
GE
GE
GE
Bus
GE
Bus
GE
Bus
GE
≤ 10µs ; T
=100A
= 40A, V
= 100A
= 100A
= 100A
= 100A
V
I
= 2.2Ω
= 2.2Ω
= 2.2Ω
= 15V ; V
F
= 0V, V
R
=15V
= V
= 20V, V
= 0V ; V
= ±15V
= ±15V
= ±15V
≤15V ; V
= 300V
= 300V
= 300V
=600V
= 40A
CE
, I
R
j
CE
R
R
APTGF90DA60CT1G
= 125°C
= 300V
CE
C
CE
CE
Bus
= 200V
= 400V
= 600V
= 1.5mA
= 25V
=300V
= 0V
= 360V
T
T
T
T
T
T
T
T
Tc = 100°C
j
j
j
j
j
j
j
j
= 25°C
= 125°C
= 125°C
= 25°C
= 175°C
= 25°C
= 175°C
= 125°C
Min
Min
Min
600
4.5
Typ
200
400
260
200
Typ
Typ
240
130
150
450
1.6
2.2
5.5
4.3
0.4
0.6
40
56
25
10
20
25
11
30
2
2
3
4000
Max
Max
Max
800
250
400
1.8
2.4
2.5
6.5
Unit
Unit
Unit
µA
µA
nA
nC
nC
mJ
pF
nF
ns
ns
V
V
A
V
A
V
2 – 5