APTM100VDA35T3G Microsemi Corporation, APTM100VDA35T3G Datasheet

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APTM100VDA35T3G

Manufacturer Part Number
APTM100VDA35T3G
Description
Dual Boost Chopper Mosfet Power Module
Manufacturer
Microsemi Corporation
Datasheet
Absolute maximum ratings
All multiple inputs and outputs must be shorted together
Symbol
R
V
MOSFET Power Module
V
E
E
I
I
P
I
DSon
DM
AR
DSS
AR
AS
D
GS
D
Dual Boost chopper
29
30
31
32
Example: 13/14 ; 29/30 ; 22/23 …
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
28 27 26
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
2
3
25
4
23 22
7
Parameter
8
20
19
10
11 12
18
16
15
14
13
www.microsemi.com
Application
Features
Benefits
V
R
I
T
T
T
D
DSS
DSon
c
c
c
= 25°C
= 80°C
= 25°C
= 22A @ Tc = 25°C
APTM100VDA35T3G
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction (PFC)
Interleaved PFC
Power MOS 7
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a single
boost of twice the current capability
RoHS Compliant
-
-
-
-
-
-
= 1000V
= 350mΩ typ @ Tj = 25°C
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Symmetrical design
Max ratings
DSon
1000
3000
±30
420
390
22
17
88
25
50
®
MOSFETs
Unit
mJ
W
V
A
V
A
1 – 7

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APTM100VDA35T3G Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM100VDA35T3G V = 1000V DSS R = 350mΩ typ @ Tj = 25°C DSon I = 22A @ Tc = 25°C D Application • ...

Page 2

... V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTM100VDA35T3G = 25°C unless otherwise specified j Test Conditions V = 0V,V = 1000V T = 25° 0V,V = 800V T = 125° ...

Page 3

... R T ⎡ exp ⎢ B ⎢ ⎣ (dimensions in mm) SP3 Package outline 28 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTM100VDA35T3G Transistor Chopper diode To heatsink T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ...

Page 4

... R vs Drain Current DS(on) 1.4 Normalized to V =10V @ 11A 1.3 GS 1.2 V =10V GS 1 0.9 0 Drain Current (A) D APTM100VDA35T3G Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds 250µs pulse test @ < 0.5 duty cycle Drain Current vs Case Temperature ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 10000 Ciss Coss 1000 Crss 100 Drain to Source Voltage (V) DS APTM100VDA35T3G ON resistance vs Temperature 2.5 V =10V GS I =11A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area ...

Page 6

... DS D=50 =5Ω Hard T =125° switching T =75° Drain Current (A) D APTM100VDA35T3G Rise and Fall times vs Current 80 V =670V =5Ω =125° L=100µ Drain Current (A) ...

Page 7

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM100VDA35T3G Single Pulse 0.001 ...

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