BAR 63-04 Infineon Technologies, BAR 63-04 Datasheet
BAR 63-04
Related parts for BAR 63-04
BAR 63-04 Summary of contents
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Silicon PIN Diodes PIN diode for high speed switching of RF signals Very low forward resistance (low insertion loss) Very low capacitance (high isolation) For frequencies up to 3GHz BAR63-02.. BAR63-04 BAR63-03W BAR63-04W Type BAR63-02L* BAR63-02V ...
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Maximum Ratings 25°C, unless otherwise specified A Parameter Diode reverse voltage Forward current Total power dissipation BAR63-02L, T 118° BAR63-02V, -02W, BAR63-03W, T BAR63-04...BAR63-06 BAR63-04S, T 115° BAR63-04W...BAR63-06W, T ...
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Electrical Characteristics at T Parameter DC Characteristics Breakdown voltage µA (BR) Reverse current Forward voltage I = 100 25°C, unless otherwise specified A Symbol V (BR ...
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Electrical Characteristics at T Parameter AC Characteristics Diode capacitance MHz 100 MHz ... 1.8 GHz R Reverse parallel resistance 100 MHz R ...
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... Forward current Parameter EHD07138 0 100 MHz 2 1 GHz 1.8 GHz BAR 63... 40 0.5 0.8 Jun-27-2003 BAR63... = ( EHD07171 25 ˚C ˚C 85 ˚ 1 ...
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Forward current BAR63-04...BAR63-06 120 Forward current BAR63-03W 120 ...
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Permissible Puls Load R BAR63-04...BAR63-06 5 K/W R thJS Permissible Puls Load R BAR63-02V, BAR63-02W 3 10 K/W 2 ...
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Permissible Puls Load R thJS BAR63-03W 0.5 0.2 0.1 0. 0.02 0.01 0.005 Permissible Puls Load R thJS BAR63-04W...BAR63-06W 3 ...
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Insertion loss | Parameter F BAR63-02L in series configuration -0.2 -0.3 -0 Isolation | ...