STTA212 ST Microelectronics, Inc., STTA212 Datasheet - Page 3

• Manufacturer Part Number: STTA212
• Description: Turboswitch - Ultra-fast High Voltage Diode
• Manufacturer: ST Microelectronics, Inc.

Fig. 1: Conduction losses versus average current.
Fig. 3: Variation of thermal impedance junction to
ambient versus pulse duration (epoxy printed cir-
cuit board FR4, e(Cu)=35 m, S(Cu)=1cm2).
100
Fig. 5: Softness factor (tb/ta) versus dI
values).
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.20
1.00
0.80
0.60
10
1E-2
0.0
1
P1(W)
0
Zth(j-a)(°C/W)
S factor
0.2
20
IF<2*IF(av)
0.4
1E-1
40
0.6
60
0.8
1E+0
80
=0.1
dIF/dt(A/µs)
IF(av) (A)
tp(s)
1.0
100
VR=600V
Tj=125°C
=0.2
1.2
120
1E+1
=0.5
1.4
140
160
1.6
F
1E+2
/dt (typical
=1
180
1.8
5E+2
200
2.0
Fig. 2: Forward voltage drop versus forward
current (maximum values).
5E+1
1E+1
1E+0
Fig. 4: Peak reverse recovery current versus dI
(90% confidence).
20
15
10
Fig. 6: Reverse recovery time versus dI
confidence).
400
350
300
250
200
150
100
1E-1
1E-2
5
0
50
0
0
IRM(A)
0
trr(ns)
0
IFM(A)
20
VR=600V
Tj=125°C
20
Tj=125°C
40
40
1
60
60
IF=IF(av)
80
80
dIF/dt(A/µs)
dIF/dt(A/µs)
2
IF=2*IF(av)
VFM(V)
100
100 120 140 160 180 200
IF=2*IF(av)
120
3
140
IF=IF(av)
STTA212S
160
VR=600V
Tj=125°C
4
F
/dt (90%
180
F
200
3/8
/dt
5