MMBT3906M Jiangsu Changjiang Electronics Technology Co., Ltd., MMBT3906M Datasheet
MMBT3906M
Manufacturer Part Number
MMBT3906M
Description
TRANSISTOR
Manufacturer
Jiangsu Changjiang Electronics Technology Co., Ltd.
Datasheet
1.MMBT3906M.pdf
(3 pages)
DESCRIPTION
PNP Epitaxial Silicon Transistor
FEATURES
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT3904M)
Ultra-Small Surface Mount Package
Also Available in Lead Free Version
APPLICATION
General Purpose Amplifier,switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:3N
MAXIMUM RATINGS* T
V
V
V
I
P
R
T
T
ELECTRICAL CHARACTERISTICS (Ta=25℃
C
J
stg
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
CBO
CEO
EBO
D
Ɵ JA
B E
MMBT3906M
Symbol
3N
C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Temperature
Storage and Temperature
A
=25℃ unless otherwise noted
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
TRANSISTOR
Symbol
V
V
V
V
V
V
V
Parameter
h
h
h
h
h
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)1
CE(sat)2
BE(sat)1
BE(sat)2
I
I
CEX
EBO
FE(1)
FE(2)
FE(3)
FE(4)
FE(5)
f
T
I
I
I
V
V
V
V
V
V
V
I
I
I
I
V
C
C
E
C
C
C
C
CE
EB
CE
CE
CE
CE
CE
CE
=-10µA,I
=-10µA,I
=-1mA,I
=-10mA,I
=-50mA,I
=-10mA,I
=-50mA,I
unless otherwise specified)
=-30V,V
=-5V,I
=-1V,I
=-1V,I
=-1V,I
=-1V,I
=-1V,I
=-20V,I
Test
C
C
C
C
C
C
B
C
E
=0
=-0.1mA
=-1mA
=-10mA
=-50mA
=-100mA
=0
C
B
B
B
B
=0
=0
EB(off)
=-10mA,f=100MHz
=-1mA
=-5mA
=-1mA
=-5mA
conditions
=-3V
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
1. BASE
2. EMITTER
3. COLLECTOR
-55-150
Value
-200
150
833
150
-40
-40
-5
-0.65
BACK
MIN
100
250
-40
-40
TOP
60
80
60
30
-5
B
E
TYP
C
C
E
B
-0.05
-0.25
-0.85
-0.95
MAX
-0.1
-0.4
300
Units
℃/W
mW
mA
℃
℃
V
V
V
UNIT
MHz
µA
µA
V
V
V
V
V
V
V
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MMBT3906M Summary of contents
Page 1
... JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors MMBT3906M TRANSISTOR DESCRIPTION PNP Epitaxial Silicon Transistor FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904M) Ultra-Small Surface Mount Package Also Available in Lead Free Version APPLICATION General Purpose Amplifier,switching For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc ...
Page 2
... =-0.5V,I =0,f=1MHz iob =-5V,I =0.1mA,f=1KHz =-3V, V =0.5V BE(OFF =-1mA =-3V, I =-10mA MIN TYP MAX 4.5 10 =1KΩ =-10mA , 35 35 225 =- 1mA B2 75 MMBT3906M UNIT ...
Page 3
illim ...