MMBTA92(LT1) N/A, MMBTA92(LT1) Datasheet
MMBTA92(LT1)
Manufacturer Part Number
MMBTA92(LT1)
Description
Silicon PNP Transistor
Manufacturer
N/A
Datasheet
1.MMBTA92LT1.pdf
(3 pages)
High Voltage Transistor
PNP Silicon
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
MMBTA92LT1 = 2D, MMBTA93LT1 = 2E
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Characteristic
Collector–Emitter Breakdown Voltage(3)
(I
Collector–Emitter Breakdown Voltage
(I
Emitter–Base Breakdown Voltage
(I
Collector Cutoff Current
( V
( V
Collector Cutoff Current
( V
A
C
C
E
= 25°C
= –1.0 mAdc, I
= –100 Adc, I
= –100 Adc, I
CB
CB
CB
= –200Vdc, I
= –160Vdc, I
= –3.0Vdc, I
Rating
B
E
C
C
= 0)
= 0)
= 0)
E
E
= 0)
= 0)
= 0)
A
= 25°C
Symbol MMBTA92 MMBTA93
V
V
V
I
CEO
CBO
EBO
C
(T
A
= 25°C unless otherwise noted.)
–300
–300
Value
MMBTA92
MMBTA93
MMBTA92
MMBTA93
MMBTA92
MMBTA93
–500
–5.0
Symbol
1
BASE
T
J
R
R
–200
–200
P
P
, T
D
D
JA
JA
stg
mAdc
Unit
Vdc
Vdc
Vdc
–55 to +150
3
COLLECTOR
2
EMITTER
Symbol
V
V
V
Max
225
300
417
1.8
556
2.4
I
I
(BR)CEO
(BR)CBO
(BR)EBO
CBO
EBO
LESHAN RADIO COMPANY, LTD.
mW/°C
mW/°C
°C/W
°C/W
–300
–200
–300
–200
–5.0
Unit
mW
mW
Min
°C
—
—
—
MMBTA92LT1
MMBTA93LT1
–0.25
–0.25
Max
–0.1
—
—
—
—
—
CASE 318–08, STYLE 6
1
SOT–23 (TO–236AB)
nAdc
Unit
Vdc
Vdc
Vdc
Adc
2
3
M32–1/3
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MMBTA92(LT1) Summary of contents
Page 1
High Voltage Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol MMBTA92 MMBTA93 Collector–Emitter Voltage V Collector–Base Voltage V Emitter–Base Voltage V Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, ( 25°C A Derate above ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (3) DC Current Gain (I =–1.0mAdc –10 Vdc –10 mAdc –10Vdc –30mAdc, V =–10 Vdc Collector–Emitter Saturation Voltage (I = –20mAdc, ...
Page 3
T = +125°C J 100 +25°C 70 –55° –1.0 –2.0 –3.0 100 5.0 2.0 1.0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 – REVERSE VOLTAGE (VOLTS) R Figure ...