MMBV409 E-Tech Electronics Ltd., MMBV409 Datasheet

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MMBV409

Manufacturer Part Number
MMBV409
Description
Silicon Tuning Diode
Manufacturer
E-Tech Electronics Ltd.
Datasheet

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control and tuning applications.It provides solid-state reliability in replacement of
mechanical tuning methods.
Silicon Tuning Diode
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
MAXIMUM RATINGS(EACH DIODE)
Reverse Voltage
Forward Current
Derate above 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBV409LT1=X5,MV409=MV409
ELECTRICAL CHARACTERISTICS(T
Reverse Breakdown Voltage
(I
Reverse Voltage Leakage Current
(V
Diode Capacitance Temperature Coefficient
1. C
Device Dissipation @T
This device is designed in the surface Mount package for general frequency
R
MMBV409LT1,MV409
=10 Adc)
R
=15Vdc)
R
Device Type
is the ratio of C
Rating
Characteristic
t
measured at 3 Vdc divided by C
A
= 25°C
C
V
Min
T
R
26
Diode Capacitance
=3.0Vdc,f=1.0MHz
CATHODE
Symbol
A
=25°C unless otherwise noted)
T
V
P
p F
T
3
I
F
stg
N o m
R
D
J
29
Symbol
V
T
I
(BR)R
CC
R
t
M B V 4 0 9 MMBV409LT1
measured at 8 vdc
280
200
Max
20
2.8
32
–55 to +150
+125
Min
20
Q,Figure of Merit
ANODE
V
f=50MHz
1
20
225
200
1.8
R
=3.0Vdc
Min
200
Typ
300
mW/°C
mAdc
Unit
Vdc
mW
°C
°C
C
MMBV409LT1
R
Min
1.5
,Capacitance Ratio
Max
f=1.0MHz(1)
0.1
CAPACITANCE DIODES
CASE
VOLTAGE VARIABLE
SOT– 23 (TO–236AB)
C
MV409
3
/ C
1
318–08, STYLE 8
8
ppm/°C
Unit
Vdc
Adc
Max
2
1.9
3
I2–1/2

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MMBV409 Summary of contents

Page 1

... Diode Capacitance Temperature Coefficient C Diode Capacitance T Device Type V =3.0Vdc,f=1.0MHz R Min MMBV409LT1,MV409 the ratio of C measured at 3 Vdc divided ANODE CATHODE Symbol MMBV409LT1 200 200 F P 280 225 D 2.8 1.8 T +125 J T –55 to +150 stg =25° ...

Page 2

... V = 15Vdc R 2.0 1.0 0.6 0.2 0.1 0.06 0.02 0.01 0.006 0.002 0.001 –60 –40 –20 0 +20 +40 +60 + AMBIENT TEMPERATURE (°C) A Figure 3. Leakage Current MMBV409LT1 MV409 1000 100 10 10 100 f , FREQUENCY ( MHz ) Figure 2. Figure of Merit 1. 3.0Vdc R 1. 1.0MHz 1.02 1.01 1.00 0.99 0.98 0.97 0.96 –75 –50 –25 +100 +120 +140 T , AMBIENT TEMPERATURE (°C) A Figure 4. Diode Capacitance ...

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