STPS10L45 ST Microelectronics, STPS10L45 Datasheet - Page 3

• Manufacturer Part Number: STPS10L45
• Description: LOW DROP POWER SCHOTTKY RECTIFIER
• Manufacturer: ST Microelectronics

Fig. 3: Normalized avalanche power derating
versus pulse duration.
0.001
Fig. 5-1:
current versus overload duration (maximum
values, per diode) (TO-220AB and D
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration.
(TO-220AB and D
100
1.0
0.8
0.6
0.4
0.2
0.0
0.01
90
80
70
60
50
40
30
20
10
1E-3
0.1
1E-3
0
0.01
1
Zth(j-c)/Rth(j-c)
P
IM(A)
= 0.1
P
= 0.2
ARM
I
= 0.5
M
ARM p
(1µs)
(t )
Single pulse
=0.5
t
0.1
Non repetitive surge peak forward
1E-2
1E-2
2
PAK).
1
t (µs)
p
tp(s)
t(s)
10
1E-1
1E-1
2
PAK).
100
=tp/T
Tc=125°C
Tc=75°C
Tc=25°C
T
tp
1E+0
1E+0
1000
Fig. 4: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
Fig. 5-2:
current versus overload duration (maximum
values,
TO-220FPAB).
Fig. 6-2: Relative variation of thermal impedance
junction to case versus pulse duration.
(ISOWATT220AB, TO-220FPAB).
80
70
60
50
40
30
20
10
1.0
0.8
0.6
0.4
0.2
0.0
1E-3
0
1
0
1E-3
0
P
Zth(j-c)/Rth(j-c)
IM(A)
ARM
P
I
M
= 0.5
= 0.2
= 0.1
ARM p
(25°C)
(t )
=0.5
t
25
Single pulse
per
Non repetitive surge peak forward
1E-2
1E-2
50
STPS10L45CT/CG/CF/CFP
diode)
T (°C)
tp(s)
1E-1
j
t(s)
75
1E-1
(ISOWATT220AB,
100
1E+0
=tp/T
125
Tc=25°C
Tc=125°C
Tc=75°C
T
tp
1E+0
1E+1
150
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