VSKE320 Vishay Siliconix, VSKE320 Datasheet - Page 10

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VSKE320

Manufacturer Part Number
VSKE320
Description
Standard Recovery Diodes
Manufacturer
Vishay Siliconix
Datasheet
www.DataSheet.co.kr
VSK.250, VSK.270, VSK.320 Series
Vishay High Power Products
www.vishay.com
10
Fig. 30 - Maximum Non-Repetitive Surge Current
Fig. 31 - Maximum Non-Repetitive Surge Current
10000
10000
9000
8000
7000
6000
5000
4000
3000
2000
9000
8000
7000
6000
5000
4000
3000
2000
Numb er Of Equal Amplitude Half Cyc le Current Pulses (N)
0.01
1
At Any Ra ted Load Condition And With
VSK.320.. Series
Per Junc tion
Ma ximum Non Rep etitive Surge Current
Rated V
VSK.320.. S eries
Per Junc tio n
Pulse T rain Dura tion (s)
R RM
Versus Pulse T rain Dura tion.
2800
2400
2000
1600
1200
800
400
No Vo ltage Reap plied
Rated V
App lied Following S urge.
0
0
0.1
10
Initial T = 150°C
Initial T = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
R RM
200
For technical questions, contact: ind-modules@vishay.com
T otal Output Current (A)
Reap plied
J
J
400
Fig. 29 - Forward Power Loss Characteristics
100
(Rec t)
3 x VSK.320.. Series
1
T hree Phase Bridge
120°
Standard Recovery Diodes, 250 to 320 A
600
Connected
T = 150°C
J
(MAGN-A-PAK
800
1000
0
Maximum Allowable Ambient T emperature (°C)
25
TM
50
Fig. 33 - Thermal Impedance Z
Power Modules)
10000
Fig. 32 - Forward Voltage Drop Characteristics
0.001
1000
75
0.01
100
0.1
0.001
1
0.5
100
S teady S tate Value:
R
(DC Operation)
Instantaneous Forward Voltage (V)
thJC
T = 25°C
S quare Wave Pulse Duration (s )
1
J
0.01
125
= 0.45 K/ W
1.5
150
0.1
2
VSK.320.. S eries
Per Junc tion
VSK.320.. S eries
Per Junction
2.5
1
Document Number: 93581
thJC
T = 150°C
3
J
Characteristics
10
Revision: 30-Oct-08
3.5
100
4
Datasheet pdf - http://www.DataSheet4U.net/

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