VSKT56 Vishay Siliconix, VSKT56 Datasheet - Page 2

• Manufacturer Part Number: VSKT56
• Description: (VSKT41 / VSKT56) Thyristor/Diode and Thyristor/Thyristor
• Manufacturer: Vishay Siliconix

VSK.41, .56..PbF Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
Notes
(1)
(2)
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2
VOLTAGE RATINGS
TYPE NUMBER
VSK.41/.56
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
(thyristors)
Maximum average forward current
(diodes)
Maximum continuous RMS
on-state current, as AC switch
Maximum peak, one-cycle
non-repetitive on-state
or forward current
Maximum I
Maximum I
Maximum value or threshold voltage
Maximum value of on-state
slope resistance
Maximum peak on-state or
forward voltage
Maximum non-repetitive rate of
rise of turned on current
Maximum holding current
Maximum latching current
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I
Average power = V
2
t for time t
2
2
t for fusing
√t for fusing
x
= I
2
√t x √t
VOLTAGE
T(TO)
CODE
04
06
08
10
12
14
16
x
x I
T(AV)
+ r
REVERSE VOLTAGE
REPETITIVE PEAK
t
V
x (I
RRM
T(RMS)
For technical questions, contact: [e-mail]
SYMBOL
V
, MAXIMUM
I
I
1000
1200
1400
1600
T(TO)
O(RMS)
I
I
400
600
800
2
dI/dt
I
I
T(AV)
F(AV)
r
V
V
TSM
FSM
√t
V
t
or
I
I
I
2
TM
FM
H
(2)
L
t
)
(1)
2
(2)
(ADD-A-PAK
180° conduction, half sine wave,
T
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
Low level
High level
Low level
High level
I
I
T
I
T
resistive load, gate open circuit
T
TM
FM
TM
C
J
J
J
Thyristor/Diode and Thyristor/Thyristor
= 25 °C, from 0.67 V
= 25 °C, anode supply = 6 V,
= 25 °C, anode supply = 6 V, resistive load
= 85 °C
= π x I
= π x I
= π x I
NON-REPETITIVE PEAK
T(AV)
F(AV)
T(AV)
(3)
(3)
REVERSE VOLTAGE
(4)
(4)
V
RSM
, I
TM
g
TEST CONDITIONS
No voltage
reapplied
100 % V
reapplied
T
no voltage reapplied
No voltage
reapplied
100 % V
reapplied
T
T
T
T
= 500 mA, t
, MAXIMUM
J
J
J
J
J
I
1100
1300
1500
1700
(RMS)
= 25 °C, no voltage reapplied
500
700
900
= 25 °C
= T
= T
= 25 °C
(3)
(4)
Generation 5 Power Modules),
V
J
J
16.7 % x π x I
I > π x I
DRM
or
maximum
maximum
RRM
RRM
45/60 A
,
r
< 0.5 µs, t
AV
Sinusoidal
half wave,
initial T
Initial T
AV
PEAK OFF-STATE VOLTAGE,
V
J
J
< I < π x I
= T
p
DRM
= T
I
(RMS)
> 6 µs
GATE OPEN CIRCUIT
J
J
, MAXIMUM REPETITIVE
maximum
maximum
AV
1000
1200
1400
1600
400
600
800
V
VSK.41
3.61
3.30
2.56
2.33
4.42
4.03
36.1
0.88
0.91
5.90
5.74
1.81
100
850
890
715
750
940
985
45
Document Number: 94419
150
200
400
Revision: 23-Apr-08
VSK.56
10.05
1310
1370
1100
1150
1450
1520
8.56
7.82
6.05
5.53
9.60
85.6
0.85
0.88
3.53
3.41
1.54
135
60
AT 125 °C
I
I
RRM,
mA
DRM
UNITS
15
kA
kA
A/µs
mΩ
mA
A
V
V
2
2
√s
s