SPB80N03S2L-05SMD Infineon Technologies Corporation, SPB80N03S2L-05SMD Datasheet - Page 7

• Manufacturer Part Number: SPB80N03S2L-05SMD
• Manufacturer: Infineon Technologies Corporation

13 Typ. avalanche energy
E
par.: I
15 Drain-source breakdown voltage
V
parameter: I
AS
(BR)DSS
mJ
350
250
200
150
100
= f (T
V
50
36
34
33
32
31
30
29
28
27
D
0
-60
25
SPP80N03S2L-05
= 80 A , V
j
= f (T
)
45
-20
D
=10 mA
65
j
)
20
DD
85
= 25 V, R
60
105
100
125
GS
145
140
= 25
°C
°C
T
T
Preliminary data
j
j


185
200
Page 7
14 Typ. gate charge
V
parameter: I
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
SPP80N03S2L-05
Gate
D
20
= 40 A pulsed
)
0,2
40
V
DS max
SPB80N03S2L-05
SPP80N03S2L-05
60
0,8 V
DS max
2001-04-05
80
nC
Q
Gate
110