STGF5NC60KD ST Microelectronics, STGF5NC60KD Datasheet - Page 2

• Manufacturer Part Number: STGF5NC60KD
• Description: N-CHANNEL 5A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT
• Manufacturer: ST Microelectronics

STGP5NC60KD - STGB5NC60KD - STGF5NC60KD
2/11
Table 3: Absolute Maximum ratings
( )Pulse width limited by max. junction temperature.
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (T
Table 5: Main Parameters
(#) Calculated according to the iterative formula:
Rthj-case Thermal Resistance Junction-case
Rthj-amb
V
I
Symbol
Symbol
V
C
V
I
BR(CES)
V
V
CM
P
V
CE(sat)
I
V
I
GE(th)
T
CES
GES
T
ECR
T
CES
TOT
I
I
T
ISO
stg
GE
C
C
C
L
j
( )
=
------------------------------------------------------------------------------------------------- -
R
THJ C
Collector-Emitter Voltage (V
Emitter-Collector Voltage
Gate-Emitter Voltage
Collector Current (continuous) at T
Collector Current (continuous) at T
Collector Current (pulsed)
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)
Storage Temperature
Operating Junction Temperature
Thermal Resistance Junction-ambient
Maximum Lead Temperature for Soldering
Purpose (1.6 mm from case, for 10 sec.)
Collector-Emitter
Breakdown Voltage
Collector cut-off Current
(V
Gate-Emitter Leakage
Current (V
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
GE
–
= 0)
T
V
Parameter
JMAX
CESAT M AX
CE
= 0)
–
T
C
C
Parameter
= 25°C
(
T
C
I
GS
C
)
I
V
V
V
V
V
V
C
= 0)
CE
CE
GE
CE
GE
GE
CASE
= 250 µA, V
= Max Rating, T
=Max Rating, T
= V
= ±20V , V
= 15V, I
= 15V, I
C
C
= 25°C (#)
= 100°C (#)
Test Conditions
GE
=25°C UNLESS OTHERWISE SPECIFIED)
, I
C
C
C
= 5A
= 5A, Tc= 125°C
= 250 µA
TO-220FP
GE
CE
TO-220
D2PAK
= 0
= 0
C
C
= 125°C
= 25°C
STGB5NC60KD
STGP5NC60KD
Min.
Min.
600
0.48
5
60
--
– 55 to 150
Value
600
±20
Typ.
Typ.
20
20
10
40
300
1.8
2
STGF5NC60KD
www.DataSheet4U.com
2500
0.20
25
Max.
±250
Max.
250
2.08
62.5
2.5
5.0
2
7
Unit
W/°C
°C/W
°C/W
°C/W
Unit
mA
µA
nA
°C
°C
V
V
V
V
W
V
V
V
A
A
A
V