STGD3HF60WD ST Microelectronics, STGD3HF60WD Datasheet - Page 2

• Manufacturer Part Number: STGD3HF60WD
• Description: 600V ultra fast IGBT
• Manufacturer: ST Microelectronics

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Electrical ratings
1
2/10
Electrical ratings
Table 2.
1. Calculated according to the iterative formula:
2. Vclamp = 80%,(V
3. Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3.
Symbol
Symbol
R
R
V
I
I
P
I
I
I
CP
V
CL
FSM
C
C
thj-case
thj-amb
CES
TOT
I
T
GE
(1)
(1)
F
(2)
(3)
j
Absolute maximum ratings
Thermal data
Collector-emitter voltage (V
Continuous collector current at T
Continuous collector current at T
Turn-off latching current
Pulsed collector current
Gate-emitter voltage
Diode RMS forward current at T
Surge non repetitive forward current t
Total dissipation at T
Operating junction temperature
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
CES
), Tj =150°C, R
I
C
(
T
C
)
=
Doc ID 16582 Rev 1
--------------------------------------------------------------------------------------------------------- -
R
G
C
thj c
= 10 Ω, V
= 25 °C
–
Parameter
×
Parameter
GE
V
GE
CE sat
= 0)
C
= 15 V
(
C
C
T
= 25 °C
j max
= 25 °C
= 100 °C
(
) max
(
p
=10ms sinusoidal
)
–
)
(
T
T
C
j max
(
)
,
I
C
(
T
C
)
)
– 55 to 150
Value
STGD3HF60WD
Value
TBD
TBD
TBD
TBD
TBD
600
±20
TBD
TBD
25
100
10
°C/W
°C/W
°C/W
Unit
Unit
°C
W
V
A
A
A
A
V
A
A