STGP14HF60KD ST Microelectronics, STGP14HF60KD Datasheet - Page 3

• Manufacturer Part Number: STGP14HF60KD
• Description: Short-circuit Rugged IGBT
• Manufacturer: ST Microelectronics

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STGF14HF60KD, STGP14HF60KD
1
Electrical ratings
Table 2.
1.
2. Vclamp = 80% of V
3. Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3.
Symbol
Symbol
R
R
R
I
I
V
P
CP
V
CL
I
thj-case
thj-case
I
I
V
thj-amb
t
FSM
C
C
CES
scw
Calculated according to the iterative formula:
TOT
I
T
ISO
GE
(1)
(1)
F
(2)
j
(3)
Collector-emitter voltage (V
Collector current (continuous) at T
Collector current (continuous) at T
Turn-off latching current
Pulsed collector current
Gate-emitter voltage
Diode RMS forward current at T
Surge non repetitive forward current t
sinusoidal
Isolations withstand voltage (RMS) from all three
leads to external hea sink
( t=1 s; T
Total dissipation at T
Short-circuit withstand time, V
T
Operating junction temperature
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
C
Absolute maximum ratings
Thermal data
= 125 °C, R
C
CES
= 25 °C)
, T
I
C
G
j
(
=175 °C, R
T
= 10 Ω, V
C
)
Parameter
C
Parameter
=
Doc ID 16118 Rev 1
= 25 °C
--------------------------------------------------------------------------------------------------------- -
R
thj c
G
=10 Ω, V
GE
GE
–
CE
= 12 V
= 0)
×
C
V
= 0.5V
= 25 °C
C
C
CE sat
GE
= 25 °C
= 100 °C
=15 V
p
(
T
= 10 ms
j max
(BR)CES
(
) max
(
)
–
)
(
,
T
T
C
j max
(
)
,
I
C
TO-220
TO-220
(
T
1.58
2.2
25
14
95
--
C
– 40 to 175
)
)
Value
Value
±20
600
62.5
50
50
20
55
5
Electrical ratings
TO-220FP
TO-220FP
2500
4.55
11
33
5.6
7
Unit
°C/W
°C/W
°C/W
Unit
°C
µs
W
V
A
A
A
A
V
A
A
V
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