STGW35NC60W ST Microelectronics, STGW35NC60W Datasheet - Page 4

• Manufacturer Part Number: STGW35NC60W
• Description: IGBTs
• Manufacturer: ST Microelectronics

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Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
V
V
CASE
(BR)CES
CE(sat)
I
I
C
GE(th)
C
C
Q
Q
CES
GES
g
Q
oes
ies
res
fs
ge
gc
g
= 25°C unless otherwise specified)
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Static electrical characteristics
Dynamic electrical characteristics
GE
GE
= 0)
= 0)
Parameter
Parameter
CE
= 0)
V
V
V
V
(see Figure 17)
I
V
V
V
V
V
V
C
CE
GE
CE
GE
GE
GE
CE
CE
CE
GE
CE
= 1 mA
= 0
= 15 V, I
= V
= 600 V
= 600 V, T
= 25 V, f = 1 MHz,
= 390 V, I
= 15 V,
= 15 V, I
= ±20 V
= 15 V
GE
Test conditions
Test conditions
, I
,
I
C
C
C
C
C
= 20 A
= 250 µA
= 20 A,T
= 20 A
C
= 20 A,
= 125 °C
C
= 125 °C
Min. Typ.
Min. Typ. Max. Unit
3.75
600
2080
17.5
175
102
STGW35NC60W
2.2
1.8
52
47
15
± 100
Max. Unit
5.75
140
250
2.6
1
mA
nC
nC
nC
µA
nA
pF
pF
pF
V
V
V
V
S