CM25MD-24H Mitsubishi Electric Semiconductor, CM25MD-24H Datasheet - Page 5

• Manufacturer Part Number: CM25MD-24H
• Description: MEDIUM POWER SWITCHING USE INSULATED TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

10
10
10
10
10
10
10
10
20
18
16
14
12
10
–1
–2
–3
8
6
4
2
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
10
1
0
10
0
0
–3
Single Pulse
T
R
IMPEDANCE CHARACTERISTICS
I
SWITCHING CHARACTERISTICS
2 3 5 7
f
th(j – f)
C
= 25°C
COLLECTOR CURRENT I
= 25A
2
t
t
d(on)
r
GATE CHARGE Q
TRANSIENT THERMAL
V
3
50
10
= 1.2°C/ W
GE
–2
V
HALF-BRIDGE
2 3 5 7
CC
– GATE CHARGE
5 7
(IGBT part)
(TYPICAL)
(TYPICAL)
TIME (s)
= 400V
100
10
10
10
1
–1
–5
2 3 5 7
2 3 5 7
V
2
CC
G
V
V
R
T
j
CC
GE
150
(nC)
G
t
t
3
10
10
= 600V
f
d(off)
= 125°C
= 13
0
–4
C
= 600V
= ±15V
2 3 5 7
2 3 5 7
(A)
5 7
200
10
10
10
10
10
10
2
3
2
7
5
3
2
7
5
3
2
–3
1
–1
–2
–3
10
10
10
10
10
10
10
10
REVERSE RECOVERY CHARACTERISTICS
–1
–2
–3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
10
1
0
10
– di/dt = 50A / µs
T
0
–3
R
Single Pulse
T
j
IMPEDANCE CHARACTERISTICS
2 3 5 7
f
th(j – f)
= 25°C
= 25°C
2
EMITTER CURRENT I
OF FREE-WHEEL DIODE
TRANSIENT THERMAL
3
10
MEDIUM POWER SWITCHING USE
= 1.9°C/W
–2
2 3 5 7
5 7
(FWDi part)
(TYPICAL)
TIME (s)
MITSUBISHI IGBT MODULES
10
10
10
1
–1
–5
2 3 5 7
2 3 5 7
2
CM25MD-24H
I
t
3
10
10
E
rr
rr
(A)
–4
0
INSULATED TYPE
2 3 5 7
2 3 5 7
5 7
10
10
10
10
10
10
10
10
10
7
5
3
2
7
5
3
2
2
3
2
7
5
3
2
7
5
3
2
1
–3
1
0
–1
–1
–2
–3
Feb.1999