FM25CL64B Ramtron, FM25CL64B Datasheet

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FM25CL64B

Manufacturer Part Number
FM25CL64B
Description
3V F-RAM Memory
Manufacturer
Ramtron
Datasheet

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Preliminary
FM25CL64B
64Kb Serial 3V F-RAM Memory
Features
64K bit Ferroelectric Nonvolatile RAM
Very Fast Serial Peripheral Interface - SPI
Description
The FM25CL64B is a 64-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 38 years
while eliminating the complexities, overhead, and
system
EEPROM and other nonvolatile memories.
The FM25CL64B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after each byte has
been successfully transferred to the device. The next
bus cycle may commence immediately without the
need for data polling. In addition, the product offers
substantial write endurance compared with other
nonvolatile memories. The FM25CL64B is capable
of supporting 10
times more write cycles than EEPROM.
These capabilities make the FM25CL64B ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25CL64B provides substantial benefits to
users of serial EEPROM as a hardware drop-in
replacement. The FM25CL64B uses the high-speed
SPI bus, which enhances the high-speed write
capability
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s internal
qualification testing and has reached production status.
Rev. 1.2
Feb. 2011
Organized as 8,192 x 8 bits
High Endurance 100 Trillion (10
38 Year Data Retention (
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
level
of
reliability
14
F-RAM
read/write cycles, or 100 million
@
problems
technology.
+75ºC)
14
) Read/Writes
caused
Device
by
Sophisticated Write Protection Scheme
Low Power Consumption
Industry Standard Configuration
Pin Configuration
Pin Name
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
Ordering Information
FM25CL64B-G
FM25CL64B-GTR
FM25CL64B-DG
FM25CL64B-DGTR
Hardware Protection
Software Protection
Low Voltage Operation 2.7-3.65V
200 µA Active Current (1 MHz)
3 µA (typ.) Standby Current
Industrial Temperature -40°C to +85°C
8-pin “Green”/RoHS SOIC and TDFN Packages
VSS
WP
SO
CS
1850 Ramtron Drive, Colorado Springs, CO 80921
VSS
/WP
/CS
SO
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage
Ground
1
2
3
4
Top View
1
2
3
4
Ramtron International Corporation
“Green” 8-pin SOIC
“Green” 8-pin SOIC,
Tape & Reel
“Green”/RoHS 8-pin TDFN
“Green”/RoHS 8-pin TDFN,
Tape & Reel
(800) 545-FRAM, (719) 481-7000
8
7
6
5
8
7
6
5
http://www.ramtron.com
VDD
/HOLD
SCK
SI
VDD
HOLD
SCK
SI
Page 1 of 14
Datasheet pdf - http://www.DataSheet4U.net/

Related parts for FM25CL64B

FM25CL64B Summary of contents

Page 1

... EEPROM and other nonvolatile memories. The FM25CL64B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling ...

Page 2

... Data transitions are driven on the falling edge of the serial clock may be connected to SI for a single pin data interface. Power Supply (2.7V to 3.65V) Ground FM25CL64B - 64Kb 3V SPI F-RAM 1,024 x 64 FRAM Array 8 SO Data I/O Register ...

Page 3

... FM25CL64B supports Modes 0 and 3. Figure 4 shows the required signal relationships for Modes 0 and 3. FM25CL64B on the rising edge of SCK and data is expected on the first rising edge after /CS goes active. If the clock begins from a high state, it will fall prior to beginning data transfer in order to create the first rising edge ...

Page 4

... Figure 2. System Configuration with SPI port Figure 3. System Configuration without SPI port Figure 4. SPI Modes 0 & 3 FM25CL64B - 64Kb 3V SPI F-RAM SO SI SCK FM25CL64B CS HOLD MOSI : Master Out Slave In MISO : Master In Slave Out SS : Slave Select ...

Page 5

... Data Transfer All data transfers to and from the FM25CL64B occur in 8-bit groups. They are synchronized to the clock signal (SCK), and they transfer most significant bit (MSB) first. Serial inputs are registered on the rising edge of SCK. Outputs are driven from the falling edge of SCK ...

Page 6

... Status Register. Reading Status provides information about the current state of the write protection features. Following the RDSR op- code, the FM25CL64B will return one byte with the contents of the Status Register. The Status Register is described in detail in a later section. ...

Page 7

... SCK is low, the current operation will pause. Taking the /HOLD pin high while SCK is low will resume an operation. The transitions of /HOLD must occur while SCK is low, but the SCK pin can toggle during a hold state. FM25CL64B - 64Kb 3V SPI F-RAM Status Register Protected Unprotected Protected ...

Page 8

... Endurance The FM25CL64B devices are capable of being 14 accessed at least 10 times, reads or writes RAM memory operates with a read and restore mechanism. Therefore, an endurance cycle is applied on a row basis for each access (read or write) to the memory array. The F-RAM architecture is based on an array of rows and columns ...

Page 9

... V DD -0.3 V – -0.3V and V , other inputs -0.3V ≤ V ≤ OUT DD FM25CL64B - 64Kb 3V SPI F-RAM Ratings -1.0V to +5.0V -1.0V to +5.0V and V < V +1. -55° 125°C 260° C 4kV 1.25kV 300V MSL-1 Typ Max Units Notes 3 3.0 mA ...

Page 10

... V = 2.7V to 3.65V unless otherwise specified Min 3.3V) DD Min - - 10% and 90 0 Min FM25CL64B - 64Kb 3V SPI F-RAM Max Units Notes 20 MHz 2 2 ...

Page 11

... Fall Time VF DD Notes 1. Slope measured at any point on V Rev. 1.2 Feb. 2011 = -40° 85° 2.7V to 3.65V unless otherwise specified Parameter (min) DD waveform. DD FM25CL64B - 64Kb 3V SPI F-RAM Min Max Units Notes µ µs/V 1 100 - µs/V 1 Page Datasheet pdf - http://www.DataSheet4U.net/ ...

Page 12

... Legend: XXXXXXX= part number, P= package type (G=SOIC) R=rev code, LLLLLLL= lot code RIC=Ramtron Int’l Corp, YY=year, WW=work week Example: FM25CL64B, “Green” SOIC package, Year 2010, Work Week 47 FM25CL64BG A00002G1 RIC1047 FM25CL64B - 64Kb 3V SPI F-RAM Recommended PCB Footprint 7.70 3.70 2.00 0.65 1.27 0.25 0.50 0.19 ° ...

Page 13

... R=Ramtron, G=”green” TDFN package, XXXX=base part number LLLL= lot code YY=year, WW=work week Example: “Green”/RoHS TDFN package, FM25L64B, Lot 0003, Year 2011, Work Week 07 R5L64B 0003 1107 FM25CL64B - 64Kb 3V SPI F-RAM Exposed metal pad should be left floating. 3.60 ±0.10 Pin 1 ID 0.30 ±0.1 2.85 REF Recommended PCB Footprint 4 ...

Page 14

... Revision Date 1.0 11/15/2010 1.1 12/15/2010 1.2 2/15/2011 Rev. 1.2 Feb. 2011 Summary Initial Release Added 4x4.5mm DFN package. Fixed endurance section Added ESD ratings. Updated DFN package marking. Changed t timing parameters. FM25CL64B - 64Kb 3V SPI F-RAM and Page Datasheet pdf - http://www.DataSheet4U.net/ ...

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