EMP216 Excelics Semiconductor, EMP216 Datasheet

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EMP216

Manufacturer Part Number
EMP216
Description
6 - 18 GHz 2 Watt Power Amplifier MMIC
Manufacturer
Excelics Semiconductor
Datasheet
1.EMP216.pdf (5 pages)
ELECTRICAL CHARACTERISTICS (T
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1. Operating the device beyond any of the above rating may result in permanent damage.
FEATURES
•
•
•
APPLICATIONS
•
•
•
SYMBOL
Output RL
SYMBOL
Input RL
T
OIMD3
V
I
T
V
P
I
GSF
P
ID
6 - 18 GHz Operating Frequency Range
33 dBm Output Power at 1dB Compression
20.0 dB Typical Small Signal Gain
Point-to-point and point-to-multipoint radio
Military Radar Systems
Test systems
PAE
DD
STG
P
CH
G
I
R
GS
DS
IN
G
T
DSS
F
1dB
1dB
TH
SS
∆
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
Operating Frequency Range
Output Power at 1dB Gain Compression
Small Signal Gain
Small Signal Gain Flatness
Supply current at 1dB Gain Compression
Power Added Efficiency at 1dB Gain Compression
Output 3
@∆f=10MHz, Each Tone Pout 21.5dBm
Input Return Loss 6GHz – 8GHz
Output Return Loss
Saturated Drain Current
Thermal Resistance (Au-Sn Eutectic Attach)
CHARACTERISTIC
PARAMETER/TEST CONDITIONS
rd
Order Intermodulation Distortion
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
8GHz – 18GHz
Specifications are subject to change without notice.
a
V
DD
= 25°C, 50 ohm, V
=3V, V
6 - 18 GHz 2 Watt Power Amplifier MMIC
GG
@ 3dB compression
=0V
-65/175°C
VALUE
70 mA
175°C
Caution! ESD sensitive device.
22W
- 4V
Idss
8V
www.excelics.com
DD
MIN
Dimension: 5330um X 3080um
31
17
6
=8V, I
Thickness: 85um ± 15um
DQ
1400
-43.0
2500
TYP
±1.2
=1250mA)
1
-12
-15
5.5
33
20
20
-8
EMP216
MAX
-10
18
-5
-8
www.DataSheet4U.com
Revision 03
Page 1 of 5
UNITS
o
dBm
GHz
dBc
C/W
mA
mA
dB
dB
dB
dB
dB
%

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EMP216 Summary of contents

Page 1

... V =3V VALUE - 4V Idss 3dB compression 175°C -65/175°C 22W Specifications are subject to change without notice. www.DataSheet4U.com EMP216 Dimension: 5330um X 3080um Thickness: 85um ± 15um =8V, I =1250mA MIN TYP MAX ±1.2 ...

Page 2

... P1dB P2dB Specifications are subject to change without notice. www.DataSheet4U.com EMP216 Gain over Temperature Frequency, GHz PAE at 1dB and 2dB gain compression PAE1dB PAE2dB Frequency, GHz Gain vs Vdd 1250mA ...

Page 3

... IM3 over temperature Pout=21.5dBm/tone -20 DB(|S(1,1)|) -40C DB(|S(2,2)|) -25 +25C +80C -30 -35 -40 -45 - Specifications are subject to change without notice. www.excelics.com www.DataSheet4U.com EMP216 Gain vs Iq, Vdd = 8V 1500mA 1250mA 1000mA Frequency, GHz Frequency, GHz 18 18 Page Revision 03 ...

Page 4

... GHz 2 Watt Power Amplifier MMIC Thickness: 85um ± 15um V DD .1uF .1uF 50pF Cap, x12 Stand-off, x4 .1uF .1uF V DD Specifications are subject to change without notice. www.excelics.com www.DataSheet4U.com EMP216 2916 1714 1372 649 164 Gold plated ridge OUT Page Revision 03 ...

Page 5

... To obtain full performance, RF input and output bond wires should be as short as possible. Wire length should be 7 mils maximum, with at least two wires per pad. Mounting the EMP216 on a “ridge” or pedestal is recommended to align the top surface of the MMIC to the interfacing substrate and minimize bond wire length. ...

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