P10NK60ZFP STMicroelectronics, P10NK60ZFP Datasheet - Page 3

• Manufacturer Part Number: P10NK60ZFP
• Description: Search -----> STP10NK60ZFP
• Manufacturer: STMicroelectronics

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STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
Table 3.
Table 4.
1.1
Symbol
Symbol
BV
E
E
I
AR
AS
AR
GSO
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER
DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the
device’s ESD capability, but also to make them safely absorb possible voltage transients that
may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Avalanche characteristics
Gate-source zener diode
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj=25°C, I
Repetitive Avalanche Energy
(pulse width limited by Tj max)
Gate-Source
Breakdown Voltage
Parameter
Parameter
D
=I
AR
Igs=±1mA
(Open Drain)
, V
Test Conditions
DD
= 50V)
Min.
30
Max Value
300
3.5
Typ.
9
1 Absolute maximum ratings
Max.
Unit
Unit
mJ
mJ
A
V
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