P12NB30 ST Microelectronics, P12NB30 Datasheet - Page 2

• Manufacturer Part Number: P12NB30
• Description: Search ---> STP12NB30
• Manufacturer: ST Microelectronics

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STP12NB30/FP
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/6
Symb ol
Symb ol
V
Symb ol
Symb ol
R
R
R
R
V
g
(BR)DSS
I
t hj-ca se
t hj- amb
thc- si nk
I
I
C
C
E
DS( on)
D(o n)
C
GS(th)
fs
I
DSS
GSS
T
AR
oss
AS
iss
rss
( )
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero G ate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold
Voltage
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
Parameter
Parameter
Parameter
j
DS
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
I
V
V
V
V
V
V
V
V
AR
Parameter
max,
D
DS
DS
GS
DS
GS
DS
GS
DS
DS
= 250 A
, V
= V
= 25 V
= Max Rating
= Max Rating
> I
= 10 V
> I
=
= 10V
case
DD
D(on)
D(on)
GS
< 1%)
30 V
= 50 V)
= 25
Test Cond ition s
Test Cond ition s
Test Cond ition s
x R
x R
I
I
D
D
f = 1 MHz
V
o
= 250 A
= 6 A
DS(on) max
DS(on) max
C unless otherwise specified)
GS
= 0
Max
Max
Typ
T
V
c
I
GS
D
= 125
= 6 A
= 0
TO-220
o
C
1
Min.
Min.
Min.
300
12
3
3
62.5
300
Max Valu e
0.5
1000
Typ .
Typ .
Typ .
0.34
250
200
25
12
TO220-F P
4
3.57
Max.
Max.
Max.
1400
270
0.4
10
35
100
1
5
Un it
Un it
Un it
o
o
o
Unit
C/W
C/W
C/W
mJ
nA
pF
pF
pF
o
V
V
A
S
A
A
A
C
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