MB84VA2003 Fujitsu Media Devices, MB84VA2003 Datasheet - Page 11

• Manufacturer Part Number: MB84VA2003
• Description: (MB84VA2002 / MB84VA2003) 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM
• Manufacturer: Fujitsu Media Devices

* : V
** :During standby mode with CE1s =
Parameter
I
Symbol
I
I
SB2
I
V
I
I
I
I
V
CC1
CC2
V
SB1
DC CHARACTERISTICS
CC1
CC2
V
V
I
SB1
SB2
I
LO
LKO
LI
OL
OH
CC
IH
s
IL
s
s
s
f
f
f
f
**
indicate lower of V
Input Leakage Current
Output Leakage Current
Flash V
(Read)
Flash V
(Program/Erase)
SRAM V
Current
SRAM V
Current
Flash V
Current
Flash V
Current (RESET)
SRAM V
Current
SRAM V
Current
Input Low Level
Input High Level
Output Low Voltage
Level
Output High Voltage
Level
Flash Low V
Voltage
Parameter Description
CC
CC
CC
CC
CC
CC
CC
CC
Active Current
Active Current
Standby
Standby
Active
Active
Standby
Standby
CC
Lock-Out
CC
f or V
CC
s
V
Max., CEf = V
OE = V
V
V
CE1s = V
CE1s = 0.2 V,
CE2s = V
WE = V
V
RESET = V
V
CE1s = V
CE1s = V
0.2 V or CE2s
= 0.2 V
I
V
I
V
OL
OH
CC
CC
CC
CC
CC
CC
CC
V
= 2.1 mA,
= –500 A,
f = V
f = V
s = V
f = V
f = V
f = V
f = V
CCS
IH
– 0.2 V, CE2s should be CE2s < 0.2V or CE2s >
CC
CC
CC
CC
CC
CC
CC
MB84VA2002
CC
IL
CC
s – 0.2 V
IH
CC
s = V
s = V
, CE2s = V
Max., CEf = V
Max., CEf = V
Max., RESET = V
Max.,
s – 0.2 V,
CC
or CE2s = V
–
Test Conditions
f ± 0.3 V
IL
CC
CC
V
3.0 V
±10%
V
3.3 V
±0.3 V
V
3.0 V
CC
CC
CC
Min.
Min.
Word
Word
Byte
Byte
s =
s =
s =
—
—
—
—
—
IH
IL
CC
IL
, OE = V
f ± 0.3 V
t
t
t
t
t
t
T
T
+85°C
T
T
+85°C
T
T
+40°C
T
+85°C
CYCLE
CYCLE
CYCLE
CYCLE
CYCLE
CYCLE
A
A
A
A
A
A
A
SS
= 25°C
= –20 to
= 25°C
= –20 to
= 25°C
= –20 to
= –20 to
± 0.3 V
= 10 MHz
= 5 MHz
=10 MHz
= 1 MHz
= 10 MHz
= 1 MHz
IH
-10
/MB84VA2003
V
CC
Min.
–1.0
–1.0
–0.3
2.2
2.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
– 0.5
Typ.
1.5
V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
1
CCS
– 0.2V
V
Max.
CC
+1.0
+1.0
2.5
0.6
0.4
2.5
22
25
12
15
35
40
12
35
55
60
50
—
+0.3*
6
5
5
2
3
2
5
Unit
mA
mA
mA
mA
mA
mA
mA
-10
V
V
V
V
V
A
A
A
A
A
A
A
A
A
A
A
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