MWI35-12A5 IXYS Corporation, MWI35-12A5 Datasheet - Page 4

• Manufacturer Part Number: MWI35-12A5
• Description: Igbt Modules Sixpack Short Circuit Soa Capability Square Rbsoa
• Manufacturer: IXYS Corporation

©1998 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: [phone], Fax: [phone]
E
E
I
CM
on
on
14
12
mJ
10
70
60
50
40
30
20
10
12
mJ
10
A
8
6
4
2
0
8
6
4
2
0
0
0
0
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
V
V
I
T
C
J
CE
GE
= 125°C
t
= 35A
= 600V
200
= ±15V
E
d(on)
on
40
t
D-68623 Lampertheim
10
r
times versus collector current
times versus gate resistor
RBSOA
400
80
20
R
T
V
J
CEK
G
600
= 125°C
= 47
< V
120
CES
30
800 1000 1200
160
R
I
G
C
40
V
V
R
T
J
200
V
CE
GE
G
CE
= 125°C
= 47
= 600V
= ±15V
E
t
50
d(on)
on
V
A
t
240
r
140
120
100
80
60
40
20
0
240
180
120
60
0
ns
ns
t
t
IXYS reserves the right to change limits, test conditions and dimensions.
Z
E
E
0.0001
thJC
off
off
0.001
0.01
K/W
0.1
mJ
0.00001 0.0001
mJ
10
6
5
4
3
2
1
0
5
4
3
2
1
0
1
0
0
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
V
V
I
T
C
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: [phone], Fax: [phone]
J
CE
GE
= 125°C
= 35A
= 600V
= ±15V
40
10
times versus collector current
times versus gate resistor
single pulse
80
20
0.001
diode
120
MWI 35-12 A5
30
0.01
R
160
G
I
t
C
40
d(off)
t
IGBT
V
V
R
T
0.1
CE
GE
J
G
200
= 125°C
= 600V
= 47
= ±15V
E
50
off
t
s
E
35-12
d(off)
t
off
f
A
t
240
f
1
600
500
400
300
200
100
0
ns
1500
1200
900
600
300
0
ns
t
842
t