D15 STMicroelectronics, D15 Datasheet - Page 4

• Manufacturer Part Number: D15
• Description: Memory Micromodules General Information for D1/ D2 and C Packaging
• Manufacturer: STMicroelectronics

Switching Characteristics
Note) Each item is evaluated by Measurement Circuit.
Notes on Operation (See Application Circuit.)
1. Be sure to protect against static electricity because this IC is MOS structure.
2. A bypass capacitor is connected between each power supply (V
3. To prevent latch-up, use a capacitor of 0.1µF (CP1, CP2) for charge pump.
4. In order to protect CCD image sensor, pre-clamp is requested prior to clamp by DCOUT.
1
2
3
Propagation delay time
Propagation delay time
Propagation delay time
Propagation delay time
Propagation delay time
Propagation delay time
Rise time
Rise time
Rise time
Fall time
Fall time
Fall time
Charge pump boosting time
Output noise voltage
Output noise voltage
Output noise voltage
Output noise voltage
See Response of Voltage Pulse.
CP1 = 0.1µF, CP2 = 0.1µF, V
See Noise on a Waveform.
Insert a silicon diode (D2) between CPP3 and CPP1.
Item
Symbol
CPP3
T
T
T
T
T
T
T
T
T
T
T
T
T
V
V
V
V
PLM
PMH
PLH
PML
PHM
PHL
TLM
TMH
TLH
TML
THM
THL
C
CLH
CLL
CMH
CML
= 20V; boosting time after all power supplies rose.
V
V
V
V
V
V
1
1
1
1
1
1
2
3
3
3
3
L
M
L
M
H
H
V
V
V
V
Conditions
V
V
M 1
H 1
M 1
L 1
H 1
L 1
– 4 –
H
, V
Min.
360
330
180
330
L
30
30
30
50
50
50
30
24
—
—
—
—
—
) and GND.
(V
H
= 15V, V
Typ.
600
550
300
550
50
50
50
80
80
80
50
40
—
—
—
—
—
M
= GND, V
Max.
120
120
120
900
770
500
770
0.5
0.5
0.5
0.5
75
75
75
75
60
10
CXD1267AN
L
= –8.5V)
Unit
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V