BAT120 Philips Semiconductors, BAT120 Datasheet - Page 3

• Manufacturer Part Number: BAT120
• Description: Schottky barrier double diodes
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulse test: t
THERMAL CHARACTERISTICS
Note
1. Refer to SOT223 standard mounting conditions.
1998 Oct 30
Per diode
V
I
I
I
T
T
T
Per diode
V
I
C
R
SYMBOL
SYMBOL
SYMBOL
F
FSM
RSM
amb
R
stg
j
amb
R
F
d
th j-a
Schottky barrier double diodes
= 25 C unless otherwise specified.
continuous reverse voltage
continuous forward current
non-repetitive peak forward current
non-repetitive peak reverse current
storage temperature
junction temperature
operating ambient temperature
forward voltage
reverse current
diode capacitance
thermal resistance from junction to ambient
p
= 300 s; = 0.02.
PARAMETER
PARAMETER
PARAMETER
t
JEDEC method
t
see Fig.5
V
V
V
f = 1 MHz; V
note 1
3
p
p
R
R
R
= 100 s
I
I
F
F
= 20 V; note 1; see Fig.6
= 25 V; note 1; see Fig.6
= 20 V; T
10 ms; half sinewave;
= 100 mA
= 1 A
CONDITIONS
CONDITIONS
CONDITIONS
R
j
= 100 C; note 1
= 4 V; see Fig.7
260
400
80
100
MIN.
65
65
TYP.
BAT120 series
VALUE
100
Product specification
25
1
10
0.5
+150
125
+125
300
450
500
1
10
MAX.
MAX.
UNIT
K/W
V
A
A
A
mV
mV
mA
mA
pF
C
C
C
UNIT
UNIT
A