SM4T30 STMicroelectronics, SM4T30 Datasheet - Page 3

• Manufacturer Part Number: SM4T30
• Description: TRANSIL
• Manufacturer: STMicroelectronics

All parameters tested at 25 C, except where indicated.
* = Marking
Note 1 :
Note 2 :
Note 3 :
Note 4 :
SM4T68
SM4T68A
SM4T100
SM4T100A
SM4T150
SM4T150A
SM4T200
SM4T200A
SM4T220
SM4T220A
100
directional
50
0
Uni
% I
PP
For surges greater than the maximum values,
the diode will present a short-circuit Anode - Cathode.
Pulse test: T
VR = 0 V, F = 1 MHz. For bidirectional types,
capacitance value is divided by 2.
V
SN
SP
SW
SX
TH
TK
TS
TT
TU
TV
BR
*
1000 s
TYPES
= T
10 s
SM4T68C
SM4T68CA
SM4T100C
SM4T100CA
SM4T150C
SM4T150CA
SM4T200C
SM4T200CA
SM4T220C
SM4T220CA
directional
*
(Ta - 25)
P
< 50 ms.
PULSE WAVEFORM 10/1000 s
Bi
*
V
BR(25 C)
WN
WP
WW
WX
XH
XK
XS
XT
XU
XV
*
.
I RM @ V RM
max
A
5
5
5
5
5
5
5
5
5
5
58.1
58.1
85.5
85.5
128
128
171
171
188
188
V
64.6
64.6
95.0
95.0
min nom max
143
143
190
190
209
209
t
V
V BR
100
100
150
150
200
200
220
220
68
68
V
Figure 1: Power dissipation derating versus
ambient temperature
100 %
note2
80
60
40
20
@
0%
74.8
71.4
110
105
165
158
220
210
242
231
%
%
%
%
V
0
I R
mA
20
1
1
1
1
1
1
1
1
1
1
40
V CL @ I PP V CL @ I PP
max
10/1000 s
137
137
207
207
274
274
328
328
92
92
(on infinite heatsink).
V
Average Power
60
4.3
4.3
2.9
2.9
2.0
2.0
1.5
1.5
1.4
1.4
A
80 100 120 140 160 180 200
Tamb (˚c)
max
121
121
178
178
265
265
353
353
388
388
V
8/20 s
6.5
6.5
19
19
13
13
(on printed circuit).
A
9
9
6
6
Peak Power
10 -4 / C ( P F)
note3
max
10.4
10.4
10.6
10.6
10.8
10.8
10.8
10.8
10.8
10.8
T
SM4Txx
note4
270
270
200
200
145
145
120
120
110
110
typ
C
143
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